Sony Corporation

Sony Semiconductor Solutions Corporation

Tadayuki Kimura

Masayoshi Sasaki

Ihachi Naiki

Michio Negishi

Kensaku Maeda

Kenichi Aoyagi

Toshihiko Hayashi

Kiyotaka Tabuchi

Takeshi Takeda

Kaori Takimoto

Takatoshi Kameshima

Masaki Okamoto

Yasufumi Miyoshi

Katsunori Hiramatsu

Yoshiyuki Enomoto

Kazunori Nagahata

Yoichi Otsuka

Yukihiro Ando

Iwao Sugiura

Masayuki Okada

Akiko Hirata

Katsuhisa Kugimiya

A solid-state image pickup apparatus includes a first structure having a first substrate, and a pixel region including a plurality of pixels which is formed in the first substrate, outputs pixel signals according to amounts of electric charges generated by photoelectric conversion, and is arrayed in a two-dimensional grid, and a second structure that is stacked on the first structure, and has a second substrate, and a logic circuit and a non-volatile memory that are formed in the second substrate, in which a first protective film having a property of inhibiting entrance of hydrogen is formed on an end surface of a storage element included in the non-volatile memory which end surface is on a side facing the first structure, and a second protective film having the property of inhibiting entrance of hydrogen is formed on a side surface of the storage element.

Solid-state image pickup apparatus and manufacturing method therefor, and electronic equipment

The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.

Semiconductor device, manufacturing method, and solid-state imaging device

A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (G), filter components of a second color (R) formed by self-alignment and each being surrounded by the filter components of the first color (G), and filter components of a third color (B) formed by self-alignment and each being surrounded by the filter components of the first color (G).

Solid-state imaging device, manufacturing method thereof, and electronic device

A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.

Methods for producing solid-state imaging device and electronic device

A method of fabricating a semiconductor device, which is capable of effectively forming high reliability contacts in a plurality of regions to be contacted which are formed at different depths. The method includes the steps of: forming an etching stopper layer on an insulating layer covering a plurality of the regions to be contacted and having a stepped shape; selectively forming, in a lower height area of the insulating layer having the stepped shape, a conductive plug layer connected to a deeper region to be contacted which is formed under the lower height area of the insulating layer; forming a planarization layer on the lower height area of the insulating layer, followed by planarization over the entire surface; and selectively forming contact holes reaching the plug layer and other shallower regions to be contacted, simultaneously.

Method of fabricating a semiconductor device including a plurality of

A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

Method and apparatus for static RAM

Static ram having an active area with a tapered bottom surface

A thin film transistor in which a device active layer is formed on an insulation film. In which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

Method of making SRAM to improve interface state density utilizing PMOS

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Kanagawa, Japan

Tadayuki Kimura