Komatsu Denshi Kinzoku Kabushiki Kaisha

Sumco Techxiv Corporation

Other

Komatsu Corporation

Tadayuki Hanamoto

Shigeo Morimoto

Toshirou Kotooka

Masato Moriya

Hiroshi Monden

Kentaro Nakamura

Hiroshi Inagaki

Yoshinobu Hiraishi

Yutaka Shiraishi

Shigeki Kawashima

Makoto Kamogawa

Toshiaki Saishoji

Daisuke Ebi

Takuji Okumura

Kengo Hayashi

Tadashi Hata

Takehiro Komatsu

Jyunsuke Tomioka

Kanichi Kadotani

Makio Tsubota

Hironori Akiba

Toshio Hayashida

Kazuhiro Mimura

A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection () in the melt () in a quartz crucible () is controlled by regulating the temperatures at a plurality of parts of the melt (). A single crystal semiconductor () can have a desired diameter by regulating the amount of heat produced by heating means () on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means () and that by the lower-side heating means () is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means () is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot

In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Apparatus for pulling single crystal by CZ method

A melt level or the gap between a melt surface and a heat shield is measured accurately irrespective of how the melt surface is. A laser beam from a range-finding unit is reflected by a scanning mirror and projected on a melt surface through an entrance window and a quartz prism in a chamber of a puller. After specular reflection, the beam forms a measurement spot in the bottom of a heat shield and scatters. Part of the scatter, after specular reflection at the melt surface (secondary reflection), passes through the prism, the entrance window and the scanning mirror to the range-finding unit. The range-finding unit carries out triangulation using the distance between a laser source and a photodetector therein, and the angle of incidence and the angle of the received laser beam.

Method and apparatus for measuring melt level

A melt level detector is provided for detecting the melt level of a CZ furnace by triangulation. The laser beam ( ) from a laser source ( ) is moved in radial directions of a crucible ( ) in the CZ furnace to find a location where a photodetector system ( ) can receive the reflection ( ) from the melt level ( ), and the laser beam ( ) is fixed at the location. Since the measurements thus take place within an extremely small angular range of the laser beam, the melt level ( ) can be detected with little effect of noise on the melt level ( ) while eliminating complexity of the device.

Method and apparatus for detecting melt level

There are provided a CZ system for manufacturing a single-crystal ingot, which produces a perfect crystal with good reproducibility through growth of a single-crystal ingot, as well as a method of manufacturing the single-crystal ingot. A system of manufacturing a single-crystal ingot by pulling a single-crystal ingot from molten raw material by means of a Czochralski technique, the system including measurement means for measuring the distance between the level of molten raw material and the bottom of a heat-shielding member. On the basis of the thus-measured distance, the temperature gradient of area G of the single-crystal pulled silicon ingot is controlled so as to produce a perfect crystal with good reproducibility, by means of controlling any factor for pulling a single-crystal silicon ingot selected from the group comprising the amount of heat applied to silicon melt, the level of silicon melt, and the pull rate of a single-crystal silicon ingot.

System for manufacturing a single-crystal ingot employing czochralski technique, and method of controlling the system

The invention provides a temperature control device with excellent temperature uniformity and thermal response, which can be manufactured easily, and a manufacturing method for the same. A thermoelectric device is arranged between a substrate mounting plate and a cooling plate . Copper foil electrodes , . . . on the upper side of the thermoelectric device are adhered to a lower surface of the substrate mounting plate with an adhesive sheet covering substantially the entire lower surface of the substrate mounting plate , and copper foil electrodes , . . . on the lower side of the thermoelectric device are adhered to an upper surface of the cooling plate with an adhesive sheet covering substantially the entire upper surface of the substrate mounting plate . The total thickness of the adhesive sheet and the copper foil electrodes adhering to it, and the total thickness of the adhesive sheet and the copper foil electrodes adhering to it, is each set approximately 25 to 1000 &mgr;m thin, so as to make the thermal resistance sufficiently low. Thermoelectric conversion elements and are distributed across a large area covering at least the entire area corresponding to the substrate

Temperature control device and method for manufacturing the same

Growing community of inventors

Nagasaki, Japan

Tadayuki Hanamoto