Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Tadayuki Dofuku

Yoshinori Toumiya

Taichi Natori

Ina Hori

Hitomi Kamiya

Takeshi Takeda

Yukihiro Sayama

Kenji Takeo

Masaya Shimoji

Yoshikazu Tanaka

Takayuki Shoya

Yasunori Koshino

Kazuaki Ogawa

Youichi Otsuka

Takashi Sakairi

Koichi Amari

Tsuyoshi Okazaki

Keiichi Maeda

Kunihiko Hikichi

Sintaro Nakajiki

Toyomi Jinwaki

Hiroyuki Miyamoto

Tomoaki Honda

Kazuhiro Tamura

Takuma Matsuno

Yuu Kawaguchi

Yosuke Takita

Chiho Araki

Katsunori Dai

Shunsuke Narui

Yuuji Adachi

Hideki Kawaguchi

Seiya Haraguchi

Takayoshi Masaki

Takuya Fujino

Atsushi Tanaka

Toshiaki Okada

Kouta Fukumoto

An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

The present technology relates to a solid-state imaging device capable of inhibiting peeling of a fixed charge film while inhibiting dark current, a method of manufacturing the same, and an electronic device. A solid-state imaging device provided with a semiconductor substrate in which a plurality of photodiodes is formed, a groove portion formed in a depth direction from a light incident side for forming an element separating unit between adjacent photoelectric conversion elements on the semiconductor substrate, a first fixed charge film formed so as to cover a surface of a planar portion on the light incident side of the semiconductor substrate, and a second fixed charge film formed so as to cover an inner wall surface of the groove portion formed on the semiconductor substrate is provided. The present technology is applicable to a backside illumination CMOS image sensor, for example.

Solid-state imaging device capable of inhibiting peeling of fixed charge film, method of manufacturing the same, and electronic device

Solid-state imaging device, method of manufacturing the same, and electronic device

Provided is an image pickup element, including: condenser lenses made of a resin containing fine metal particles; photoelectric conversion elements formed in a silicon substrate and each configured to photoelectrically convert incident light that enter from an outside through corresponding one of the condenser lenses; and a protective film made of a silicon compound, the protective film being formed between the condenser lenses and the silicon substrate.

Image pickup element, imaging apparatus, manufacturing apparatus for image pickup element, and manufacturing method for image pickup element

Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.

Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.

Method of manufacturing solid state imaging device, and solid state imaging device

A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device

To provide a method for producing a solid-state imaging device enabling an improvement of a light sensitivity characteristic in a light receiving unit, a solid-state imaging device in which the light sensitivity characteristic is improved, and a camera provided with the solid-state imaging device. A shield film projected around the light receiving unit is formed on a substrate in which the light receiving unit is formed; an transparent insulation film is formed on the shield film; a sidewall insulation film is formed by etch-back of the insulation film, in a side wall of the shield film; a mask layer having an aperture at a position corresponding to the light receiving unit is formed on the shield film; and the shield film is etched by using the sidewall insulation film and the mask layer as a mask to form an aperture portion exposing the light receiving unit.

Solid-state imaging device having improved light sensitivity and a method for producing the same

Growing community of inventors

Kumamoto, Japan

Tadayuki Dofuku