Kabushiki Kaisha Toshiba

Tadayoshi Watanabe

Takamasa Usui

Yumi Hayashi

Hayato Nasu

Hisashi Kaneko

Naofumi Nakamura

Noriaki Matsunaga

Tadashi Iijima

Masako Kodera

Hirokazu Ezawa

Hideyuki Tomizawa

Sachiyo Ito

Yoshiaki Shimooka

Koichi Matsuno

Takeshi Sakaguchi

Shinichi Sotome

Shiro Mishima

Naoki Kai

Hirokazu Sugiyama

Yoshihisa Fujii

Masako Morita

A semiconductor device including a first isolation region dividing a semiconductor substrate into first regions; memory cells each including a tunnel insulating film, a charge storing layer, an interelectrode insulating film, and a control gate electrode above the first region; a second isolation region dividing the substrate into second regions in a peripheral circuit region; and a peripheral circuit transistor including a gate insulating film and a gate electrode above the second region. The first isolation region includes a first trench, a first element isolation insulating film filled in a bottom portion of the first trench, and a first gap formed between the first element isolation insulating film and the interelectrode insulating film. The second isolation region includes a second trench and a second element isolation insulating film filled in the second trench. The first and the second element isolation insulating films have different properties.

Semiconductor storage device and method of manufacturing the same

A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

Semiconductor device including a metal wiring with a metal cap

A method of fabricating a semiconductor device includes forming an insulating film above a semiconductor substrate, forming a concave portion in the insulating film, forming a precursor film including a predetermined metallic element on a surface of the insulating film, carrying out a heat treatment on the precursor film and the insulating film to react with each other, thereby forming an insulative barrier film mainly comprising a compound of the predetermined metallic element and a constituent element of the insulating film in a self-aligned manner at a boundary surface between the precursor film and the insulating film, removing an unreacted part of the precursor film after forming the barrier film, forming a conductive film comprising at least one of Ru and Co on the barrier film, depositing a wiring material film on the conductive film, and forming a wiring from the wiring material film to provide a wiring structure.

Semiconductor device and method of fabricating the same

A first insulating film is formed on a semiconductor substrate. A first interconnection is formed in a trench formed in the first insulating film. A first barrier film is formed between the first interconnection and first insulating film. A second insulating film is formed on the upper surface of the first interconnection, and in a first hollow portion between the side surface of the first barrier film and the first insulating film. The second insulating film is formed from the upper surface of the first interconnection to a depth higher than the bottom surface of the first interconnection. The first hollow portion is formed below the bottom surface of the second insulating film.

Semiconductor device and method of manufacturing the same

In one aspect of the present invention, a method of fabricating a semiconductor device may include forming a sacrificial film on a substrate, forming an insulating film on the sacrificial film, forming a plurality of first openings in the sacrificial film and the insulating film in a first region and a second region, depositing a conductive material in the plurality of the first openings, forming a second opening in the insulating film in the second region so as to expose the sacrificial film, and removing the sacrificial film in the first region via the second opening in the second region.

Manufacturing method of semiconductor device

A method of fabricating a semiconductor device according to an embodiment includes: forming a precursor film containing therein a predetermined metallic element on a surface of a recess portion formed in an insulating film on a semiconductor substrate; forming a wiring formation film on the precursor film; performing a heat treatment in an oxidation ambient atmosphere to cause the precursor film and the insulating film to react with each other, thereby forming a self-formed barrier film containing a compound, containing therein the predetermined metallic element and a constituent element of the insulating film, as a basic constituent in a boundary surface between the precursor film and the insulating film, and moving the predetermined metallic element unreacted into the wiring formation film through diffusion to cause the predetermined metallic element unreacted to react with oxygen contained in the oxidation ambient atmosphere on a surface of the wiring formation film, thereby precipitating an unreacted metallic oxide film including the predetermined metallic element; forming the same material as that of the wiring formation film on the wiring formation film after the unreacted metallic oxide film is removed; and flattening the wiring formation film until a portion of the insulating film located outside the recess portion is exposed.

Method of fabricating semiconductor device

In one aspect of the present invention, A method for manufacturing a semiconductor device may include forming a first wiring in a first insulating layer on a base member, forming a second insulating layer on the first insulating layer, forming a first hole in the second insulating layer so as to reach the first wiring in the first insulating layer and a second hole in the second insulating layer so as to reach the first insulating layer, forming a via contact in the first hole, and forming a third insulating layer on the second insulating layer so as to shut the second hole.

Semiconductor device and manufacturing method of semiconductor device

In one aspect of the present invention, a semiconductor device may include an inter-wiring dielectric film in which a wiring trench is formed, a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film, a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer, a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom of the metal used in the wiring layer, and a gap formed between the first barrier layer and the second barrier layer.

A semiconductor device according to an embodiment includes: a semiconductor substrate having a semiconductor element formed on a surface thereof; an interwiring insulating film formed above the semiconductor substrate; a wiring formed in the interwiring insulating film; a first intervia insulating film formed under the interwiring insulating film; a first via formed in the first intervia insulating film and connected to a lower surface of the wiring; a second intervia insulating film formed on the interwiring insulating film; a second via formed in the second intervia insulating film and connected to an upper surface of the wiring; and a CuSiN film formed in at least one of a position between the interwiring insulating film and the first intervia insulating film, and a position between the interwiring insulating film and the second intervia insulating film.

A metal wiring buried in an insulating layer is subjected to a reducing treatment prior to formation of a second insulating layer on the insulating layer under the condition that the total partial pressure of oxygen and water vapor is sufficiently low.

Method of manufacturing semiconductor device having buried metal wiring

Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating layer and a metallic wiring layer formed on the semiconductor substrate; and an intermediate layer formed between the insulating layer and the metallic wiring layer in contact with both the insulating layer and the metallic wiring layer, wherein the intermediate layer contains the metallic material forming the metallic wiring layer, Si and O.

Growing community of inventors

Kanagawa-ken, Japan

Tadayoshi Watanabe