Canon Kabushiki Kaisha

Tadayoshi Muta

Hiroyuki Morimoto

Riichi Saito

Manabu Takayama

Tadanori Suto

Jin Tachikawa

Toru Yamane

Hiroshi Takabayashi

A semiconductor apparatus with a penetrating electrode having a high aspect ratio is manufactured with a low-temperature process. In one embodiment a first electrodeand a second electrodeof a semiconductor substratethat are provided at the front and rear surface sides, respectively, are electrically connected by a conductive objectfilled in a contact holeand an extended portionof the second electrodeextends to the contact hole. Even though the contact holehas a high aspect ratio, film formation using the low-temperature process is enabled by using the conductive object, instead of forming the second electrodeon a bottom portion of the contact hole

Semiconductor apparatus having a high-aspect penetrating electrode and manufacturing method thereof

Provided is a semiconductor apparatus which may check a state of connection of a penetrating electrode in a semiconductor substrate with ease. A semiconductor apparatus manufacturing method includes: forming in a semiconductor substrate at least three kinds of the through-holes each having a large area, a middle area, and a small area of openings; forming a conductive layer on an inner surface of the at least three kinds of the through-holes having different areas of the openings to form the penetrating electrodes; and measuring resistance values of the penetrating electrode including the through-hole having the large area of the opening and the penetrating electrode including the through-hole having the small area of the opening among the three kinds of the penetrating electrodes to determine states of connection of the penetrating electrodes.

Semiconductor apparatus manufacturing method and semiconductor apparatus

There is provided a method of manufacturing the semiconductor apparatus, including: forming through-hole which penetrates a semiconductor substrate at a point that corresponds to a location of an electrode pad; forming an insulating film on a rear surface of the semiconductor substrate, including the interior of the through-hole; forming an adhesion securing layer from a metal or an inorganic insulator on a surface of the insulating film at least in an opening portion of the through-hole; forming a resist layer to serve as a mask in bottom etching on the adhesion securing layer; performing bottom etching to expose the electrode pad; removing the resist layer to obtain the insulating film free of surface irregularities that would otherwise have been created by bottom etching; forming a barrier layer, a seed layer, and a conductive layer by a low-temperature process; and performing patterning.

The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.

Semiconductor device and method of manufacturing semiconductor device

A liquid discharge head which comprises an element substrate having on one surface thereof energy generating element for generating energy to be utilized for discharging liquid from a liquid discharge port, and a liquid supply port communicated with the liquid discharge port, a printed substrate provided with an external fetch electrode, and an IC component for control use for the energy generating element having provided therefor an output side electrode connected with the energy generating element and an input side electrode connected with the external fetch electrode. For this liquid discharge head, at least the aforesaid output side electrode of the IC component for control use is provided for the one surface of the element substrate. With the structure thus arranged, it is made easier to elongate the liquid discharge head in higher precision, and also, as compared with the case where the driver (driving element) for the discharge energy generating element is incorporated on the assembling substrate, the nondefective ratio of the finished products thereof is enhanced, hence contributing to the manufacture at lower costs.

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Honjo, Japan

Tadayoshi Muta