Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Tadayoshi Miyamoto

Kazuatsu Ito

Seiichi Uchida

Shigeyasu Mori

Yasuyuki Ogawa

Fumiki Nakano

Yutaka Takamaru

Mitsunobu Miyamoto

Naoki Makita

Makoto Nakazawa

Takuya Matsuo

Atsushi Yoshinouchi

Shunpei Yamazaki

Satoshi Teramoto

Naoto Kusumoto

Takeshi Fukunaga

Setsuo Nakajima

Yoshitaka Yamamoto

Kazuhide Tomiyasu

Yoshinobu Nakamura

Takashi Funai

Yohsuke Kanzaki

Takao Saitoh

Hiroshi Matsukizono

Masashi Maekawa

Yasuhiro Mitani

Katsumi Nomura

Tsukasa Shibuya

Takamasa Kosai

Hongyong Zhang

Yutaka Takafuji

Hidehito Kitakado

Seiji Kaneko

Kaoru Yamamoto

Youji Yoshimura

Akira Takenouchi

Sumio Katoh

Akihiro Oda

Tokuaki Kuniyoshi

Keisuke Ide

Mitsuhiro Tanaka

Atsushi Tomyo

Takamasa Kousai

Toshihiko Degawa

Kayo Haruguchi

A display device includes a drive transistor and a switching transistor formed by layering an inorganic insulating film, an oxide semiconductor layer, an upper gate insulating layer, an upper gate electrode, and an interlayer insulating film. The drive transistor and the switching transistor include an oxide semiconductor film formed of the oxide semiconductor layer and provided in an island shape corresponding to the drive transistor and an island shape corresponding to the switching transistor, and the oxide semiconductor film includes a channel region overlapping with the upper gate electrode corresponding to the oxide semiconductor film, and a source region and a drain region. The drive transistor is provided with a lower gate electrode and a lower gate insulating layer between the inorganic insulating film and the oxide semiconductor layer. The length of lower gate electrode is less than or equal to the length of upper gate electrode.

Display device with driving transistor having upper and lower gate electrodes

The transistor includes a first insulating film, an oxide semiconductor layer, a gate insulating film, an upper gate electrode, and a second insulating film being sequentially layered on a substrate, and the transistor includes a light blocking layer layered on the second insulating film and formed of metal. The light blocking layer is electrically connected to the upper gate electrode by interposing a gate contact hole provided in the second insulating film. The oxide semiconductor layer is configured such that a region overlapping with the upper gate electrode entirely overlaps with the light blocking layer.

Transistor and display device

An active matrix substrate includes a peripheral circuit including a TFT (A) supported on a substrate (). When viewed in a direction normal to the substrate (), a first gate electrode () of the TFT (A) includes a first edge portion and a second edge portion () opposing each other. The first edge portion and the second edge portion extend across an oxide semiconductor layer () in a channel width direction. At least one of the first edge portion and the second edge portion includes, in a region overlapping with the oxide semiconductor layer (), a first recess portion () recessed in a channel length direction and a first part () adjacent to the first recess portion in the channel width direction. When viewed in the direction normal to the substrate (), a source electrode () or a drain electrode () of the TFT (A) overlaps with at least a part of the first recess portion () and at least a part of the first part ().

Active matrix substrate

An active matrix substrate includes a demultiplexer circuit which includes a plurality of DMX circuit TFTs. Each of the DMX circuit TFTs includes a front-gate electrode (FG) supplied with a control signal from one of a plurality of control signal main lines ASW, BSW and a back-gate electrode (BG) supplied with a back-gate signal which is different from the control signal. The plurality of DMX circuit TFTs includes first DMX circuit TFTs (T, T) and second DMX circuit TFTs (T, T). The back-gate electrode of each of the first DMX circuit TFTs (T, T)is connected with a first back-gate signal main line (BGL()) which supplies a first back-gate signal and, the back-gate electrode of each of the second DMX circuit TFTs (T, T)is connected with a second back-gate signal main line (BGL()) which supplies a second back-gate signal which is different from the first back-gate signal.

Active matrix substrate and demultiplexer circuit

In a demultiplexer circuit, each unit circuit includes at least n TFTsand n branch lines connected with one video signal line. Each TFTincludes an oxide semiconductor layer, an upper gate electrodeprovided on the oxide semiconductor layer with a gate insulating layerinterposed therebetween, and a first electrodeand a second electrode. The demultiplexer circuit further includes a first interlayer insulating layercovering the oxide semiconductor layer and the upper gate electrode and a second interlayer insulating layerprovided on the first interlayer insulating layer. The first electrodeis provided between the first interlayer insulating layerand the second interlayer insulating layerand is in contact with the oxide semiconductor layer inside a first contact hole CHformed in the first interlayer insulating layer. The second electrodeis provided on the second interlayer insulating layerand is in contact with the oxide semiconductor layer inside a second contact hole CHformed in the first and second interlayer insulating layers.

This display device is provided with: a circuit substrate having a display region and a non-display region; pixel-driving TFTs for driving pixels, formed in the display region and having source electrodes and drain electrodes being spaced apart from each other on an insulating film and a first active layer formed from an oxide semiconductor, provided on the opposite side from the insulating film so as to cover a separation section between a source electrode and a drain electrode and part of the source electrode and part of the drain electrode adjacent to the separation section; and a driver circuit TFT for driving the pixel-driving TFTs, formed in the non-display region and having a second active layer formed from a non-oxide semiconductor.

Display device and method for manufacturing same

Provided is an active-matrix substrate in which the line resistance is decreased. The active-matrix substrate includes a substrate, a plurality of gate lines Gj disposed on the substrateand extending in a first direction, a plurality of source lines Si disposed on the substrateand extending in a second direction different from the first direction, a transistordisposed correspondingly to each of intersection points of the gate lines and the source lines Si and connected to a corresponding one of the gate lines Gj and a corresponding one of the source lines Si, an insulating layer, and extended conductive films, and. At least ones of the gate lines Gj and the source lines Si each have a layered structure with connection to the extended conductive film via a contact hole provided in the insulating layer.

Active-matrix substrate

An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device () includes: an oxide semiconductor layer () provided on a substrate (); a passivation film () and a planarizing film () which are stacked on the oxide semiconductor layer; and a photodiode () including a lower electrode (), a photoelectric conversion layer (), and an upper electrode (). The lower electrode is connected to a source electrode () via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.

Photoelectric conversion device

A photosensor substrate includes: a substrate; gate lines arranged on the substrateand extend in a first direction; source lines Si arranged on the substrateand extend in a second direction; transistors arranged in correspondence to points of intersection between the source lines and the gate lines, respectively, and are connected therewith; an insulating layer that covers the transistors; photoelectric conversion elementsarranged in correspondence to the points of intersection between the source lines and the gate lines, and are connected with the transistors via first contact holes CHin the insulating layer, and bias linesthat extend in the second direction, and are connected with the photoelectric conversion elements. The source lines are connected with the transistors via second contact holes CHin the insulating layer, and have a line width greater than a line width of the bias lines

Photosensor substrate

An active matrix substrate includes a substrate; gate lines arranged on the substrateand extend in a first direction; source lines Si arranged on the substrateand extend in a second direction that is different from the first direction; transistorsarranged in correspondence to points of intersection between the gate lines and the source lines, respectively, and are connected with the gate lines and the source lines; and an insulating layer. At least either the gate lines and the source lines are connected with electrodes of the transistors via contact holes in the insulating layer, and are formed to satisfy at least either i) having a greater film thickness or ii) being formed with a material having a smaller specific resistance, as compared with the electrodes of the transistors to which the lines are connected via the contact holes in the insulating layer.

A photosensor substrate achieves TFT property stabilization and further improvement in sensor performance. The photosensor substrate includes a substrate, a photoelectric transducer, and a transistor. The transistorincludes a semiconductor layer, a drain electrodeand a source electrodefacing each other in a direction parallel to a plane of the substrate with the semiconductor layerinterposed therebetween, a gate insulating filmcovering the semiconductor layer, the drain electrode, and the source electrode, and a gate electrodefacing the semiconductor layerwith the gate insulating filminterposed therebetween. The photoelectric transducerincludes a lower electrodeconnected to the drain electrodevia a contact hole CHprovided in the gate insulating film, a semiconductor film, and an upper electrode

A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.

Semiconductor device and liquid crystal display device

A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

Light detection device with integrated photodiode and thin film transistor

A liquid crystal panel () includes a pair of substrates (); a liquid crystal layer () provided between the pair of substrates; and a sealing member () provided so as to surround the liquid crystal layer. A plurality of pixels (P, P) are provided in a matrix in a region surrounded by the sealing member. Each of the plurality of pixels includes an oxide semiconductor TFT () provided in one substrate () of the pair of substrates; and a pixel electrode () provided in the one substrate and connected with the oxide semiconductor TFT. Each of the plurality of pixels is configured such that when the oxide semiconductor TFT is switched from an on-state to an off-state, a level of a voltage to be applied to the liquid crystal layer by use of the pixel electrode is shifted in a negative direction by a pull-in voltage &#x394;Vd. A pull-in voltage &#x394;Vdin a first pixel (P) among the plurality of pixels is lower than a pull-in voltage &#x394;Vdin a second pixel (P) located farther from the sealing member than the first pixel.

Liquid crystal panel and active matrix substrate used therefor

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Osaka, Japan

Tadayoshi Miyamoto