Tokyo Electron Limited

Tadatoshi Tomita

Makoto Muramatsu

Takahiro Kitano

Keiji Tanouchi

Hisashi Genjima

Gen You

Takanori Nishi

Mark H Somervell

Hidetami Yaegashi

Benjamen M Rathsack

Shinichiro Kawakami

Hiroshi Nakamura

Kenichi Oyama

Takashi Yamauchi

Takafumi Niwa

Soichiro Okada

Yuhei Kuwahara

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Computer storage medium to perform a substrate treatment method using a block copolymer containing a hydrophilic and hydrophobic copolymers

A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.

Substrate processing method and computer storage medium

Substrate treatment method using a block copolymer containing a hydrophilic and a hydrophobic polymers

A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

Substrate treatment method, computer storage medium and substrate treatment system

The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

Pattern forming method and heating apparatus

A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.

Substrate treatment method, computer storage medium, and substrate treatment system

A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

Substrate treatment method, computer readable storage medium and substrate treatment system

The present invention is a pattern forming method of forming a pattern on a substrate using a block copolymer, the pattern forming method including the steps of: forming a film of a block copolymer containing at least two kinds of polymers on the substrate; heating the film of the block copolymer; irradiating the heated film of the block copolymer with ultraviolet light in an atmosphere of an inert gas; and supplying an organic solvent to the film of the block copolymer irradiated with the ultraviolet light.

Pattern forming method, pattern forming apparatus, and computer readable storage medium

A photoresist pattern used for forming a pattern of a block copolymer is formed on a substrate, and then an acid solution is supplied and an alkaline solution is further supplied to the photoresist pattern so as to slim and smooth the photoresist pattern. A block copolymer solution is applied to the substrate on which the smoothed photoresist pattern has been formed, to form a film of the block copolymer, and the film is heated.

Pattern forming method, pattern forming apparatus, and non-transitory computer-readable storage medium

A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) is formed surrounding the exposed topography. Further to the method, the exposed template surfaces are chemically treated. In one embodiment, the surfaces are treated with a hydrogen-containing reducing chemistry to alter the surfaces to a less oxidized state. In another embodiment, the surfaces are coated with a first phase of a block copolymer (BCP) to render the surfaces more attractive to the first phase than prior to the coating. The template is then filled with the BCP to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.

Use of topography to direct assembly of block copolymers in grapho-epitaxial applications

A substrate processing method includes a first process (step Sto step S) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step Sto step S) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S) and a line width of the second resist pattern, and the first process (step S) is performed on the substrate under the determined first processing condition.

Growing community of inventors

Koshi, Japan

Tadatoshi Tomita