Seiko Epson Corporation

Tadatoshi Nakajima

Satoru Kodaira

Kimihiro Maemura

Koji Miyashita

Hitoshi Kobayashi

A semiconductor device includes: a semiconductor layer having a shading target region; a semiconductor element provided on the semiconductor layer in the shading target region; a first interlayer dielectric provided on the semiconductor element; a plurality of first shading layers provided on the first interlayer dielectric; a second interlayer dielectric provided on at least the first shading layers; and a second shading layer provided on the second interlayer dielectric and having a predetermined pattern. The second shading layer has such a pattern that the second shading layer is positioned at least between the adjacent first shading layers.

Semiconductor device

A semiconductor memory device has a first precharge transistor connecting a potential supply line to one end of a bit line when the bit line is precharged and a second precharge transistor connecting the potential supply line to the other end of the bit line when the bit line is precharged. To a gate of the first precharge transistor is inputted a first precharge signal, and to a gate of the second precharge transistor is inputted a second precharge signal generated based on a chip-select signal and the first precharge signal. The second precharge transistor is brought into a cut-off state during a standby state in which a memory cell corresponding to the second precharge transistor does not read nor write data but holds date.

Growing community of inventors

Suwa, Japan

Tadatoshi Nakajima