Lan Technical Service Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Sony Corporation

Kabushiki Kaisha Toshiba

Fujitsu Corporation

Nec Corporation

Matsushita Electric Industrial Co., Ltd.

Sanyo Electric Co., Ltd.

Rohm Co., Ltd.

Oki Electric Industry Co., Ltd.

Renesas Technology Corp.

Bondtech Co., Ltd.

Tadatomo Suga

Isabers Japan Co. Ltd.

Yoshiie Matsumoto

Akira Yamauchi

Toshihiro Itoh

Methods of bonding substrates are provided, including forming a thin film of a metal oxide on a bonding surface of both or either of a pair of substrates, at least one of which is a transparent substrate, and contacting the bonding surfaces of the pair of substrates with each other via the thin film of the metal oxide.

Method for bonding substrate, transparent substrate laminate, and device provided with substrate laminate

[Problem] To provide a technology that allows a film or glass to be bonded to a transport substrate and to be easily separated during the manufacture of a substrate. [Solution] Provided is a method for manufacturing a substrate having an electronic device formed on a surface, the method comprising a formation step for forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate; a bonding step for pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and a separation step for separating the substrate and the transport substrate.

Thin substrate, method for manufacturing same, and method for transporting substrate

The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S) for forming a first inorganic material layer on part or all of a first polymer film; a step (S) for forming a second inorganic material layer on part or all of a second polymer film; a step (S) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

Method for bonding polymer film and polymer film, method for bonding polymer film and inorganic material substrate, polymer film laminate, and laminate of polymer film and inorganic material substrate

[Problem] The aim of the invention is to provide a method of sealing an electronic element such as an organic EL element using a normal temperature bonding method that enables bonding at low temperature and in which permeation of external gases such as hydrogen or oxygen through the sealed section (dam) formed by the organic material, or the junction interface of the sealed section and a cover substrate is suppressed. [Solution] A method of sealing an electronic element comprises a step of forming a sealing section by forming a sealing section including an organic material on the surface of a first substrate formed with the electronic element, surrounding this electronic element with a thickness that is larger than that of this electronic element; a step of forming a first inorganic material layer in which a first inorganic material layer is formed at least on the exposed surface of this sealing section; and a substrate bonding step of bonding the first substrate and the second substrate by pushing together the sealing section of the first substrate and the junction location of the second substrate.

Electronic element sealing method and bonded substrate

[Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween. [Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

Chip-on-wafer bonding method and bonding device, and structure comprising chip and wafer

The present invention relates to a high-reliable semiconductor device in which electrodes formed on substrates are prevented from deteriorating by sealing the electrodes with a frame member rather than a sealing material. The frame member in the present invention surrounds electrodes formed on the substrates. The inside of the frame member is vacuous or filled with a gas which does not react with the electrodes such as an inert gas and, thereby, the electrodes are prevented from deteriorating by attacks of oxygen or moisture.

High-reliable semiconductor device using hermetic sealing of electrodes

There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductorand a grounding wiring layer, which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portionsince they have a hardness lower than that of a through hole insulatormade of silicon nitride. The through hole insulatoris selectively etched by a reactive ion etching method until the through hole insulatorcomes to have a height equal to the height of a bottom portionof the dishing portionof the through hole conductor. The through hole conductorsandare aligned with each other, and the bonding surfacesandare bonded to each other in a solid state bonding manner.

Growing community of inventors

Nakano-ku, Japan

Tadatomo Suga