Fujitsu Corporation

Tadasi Oshima

Koichi Hashimoto

Teruyoshi Yao

Eiichi Kawamura

Nobuhisa Naori

Masaharu Kobayashi

Hideki Harada

Yoshiyuki Ohkura

A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I &equals;I&dgr;/I to 0.2 or smaller, where I is an average value of light intensity in the photoresist film, and I&dgr; is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

Manufacture of semiconductor device using A-C anti-reflection coating

A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.

Manufacture of semiconductor device using a-c anti-reflection coating

A semiconductor substrate 11 having concavities and convexities in the upper surface, and silica particles (granular insulators) 15 provided in the concavities to planarize the entire upper surface of the semiconductor substrate 11 are included. First, the silica particles 15 are laid over an upper surface of a semiconductor substrate 11 to provide the granular insulators 15 in cavities in the upper surface of the semiconductor substrate 11, and the silica particles 15 provided on convexities on the upper surface of the semiconductor substrate 11 are removed, whereby the concavities 11 are buried with the silica particles 15 so as to improve global planarizarion.

Method for fabricating semiconductor device

Growing community of inventors

Kawasaki, Japan

Tadasi Oshima