Sharp Kabushiki Kaisha Corporation

Daiichi Kigenso Kagaku Kogyo Co., Ltd.

Kawamura Gishi Co., Ltd.

Tadashi Yasui

Satoshi Morishita

Koichiro Fujita

Takao Kinoshita

Tomotoshi Satoh

Takane Mitomi

Takeshi Usui

Satoshi Watanabe

Daisuke Kurita

Hiromitsu Nakajima

Kyosuke Domae

Kazuyoshi Horiuchi

Junji Katsuhira

A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.

Semiconductor wafer, semiconductor device diced from semiconductor wafer, and method for manufacturing semiconductor device

A spinal orthosis includes: a pair of waist mounting members () fixed to both side surfaces of the waist; and a chest pressing member () installed to each waist mounting member. The chest pressing member includes: an arched arm () pivotally supported by pivots provided on both side surfaces of the waist mounting members and capable of swinging; a chest pressing body () provided at an upper end portion of the arm; a pressing force giving portion () provided at a middle part of the arm and giving a pressing force for pressing the chest pressing body to a chest.

Spinal orthosis

A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses () are formed in a nitride semiconductor multilayer body () composed of an undoped GaN layer () and an undoped AlGaN layer () formed on an Si substrate (), and a source electrode () and a drain electrode () are formed in the recesses (). In a region deeper than an interface (S, S) between the GaN layer () and the source electrode () and drain electrode (), which are formed from a TiAl material, a first chlorine concentration peak (P) is formed in vicinity of the interface, and a second chlorine concentration peak (P) having a chlorine concentration of 1.3&#xd7;10cmor lower is formed at a position deeper than the first chlorine concentration peak (P).

Nitride semiconductor device

The present invention relates to a nickel oxide-stabilized zirconia composite in which nickel oxide is dispersed uniformly, a process for readily producing the composite oxide, and an anode for a solid oxide fuel cell having excellent output characteristics. More specifically, the present invention provides a nickel oxide-stabilized zirconia composite that is produced by sintering a mixture of nickel hydroxide and/or nickel carbonate and a hydroxide of stabilized zirconium.

Process for production of nickel oxide-stabilized zirconia composite oxide

Growing community of inventors

Osaka, Japan

Tadashi Yasui