Renesas Electronics Corporation

Oki Electric Industry Co., Ltd.

Honda Motor Co., Ltd.

Sony Corporation

Oki Semiconductor Co., Ltd.

Sony Group Corporation

Nikon Corporation

Renesas Technology Corp.

Lapis Semiconductor Co., Ltd.

Teraoka Seisakusho Co., Ltd.

Nikon Systems Inc.

Tadashi Yamaguchi

Masashi Inoue

Keiichiro Kashihara

Tomonori Okudaira

Toshiaki Tsutsumi

Seijiro Inaba

Satoshi Shimizu

Tatsunori Murata

Kiyoteru Kobayashi

Yoshihisa Matsuoka

Daisuke Nakao

Mahito Sawada

Haruka Asai

Koyu Asai

Ming Lei

Shohei Ogino

Yoshimi Tsuboi

Takuro Kamada

Hiroyuki Suzuki

Kenji Kawai

Satoru Ishii

Masafumi Wakazono

Tatsuya Ohzu

Takuya Futase

Shinichi Okita

Kenji Nagasaki

Keisuke Azusawa

Kazumasa Yonekura

Toshikazu Umatate

Takashi Sugawara

Satoshi Ogino

Kazumi Fukuda

Yusuke Kawano

Yoshihiro Miyagawa

Kazuyuki Ohta

Yoshimasa Kushima

Yoji Kawasaki

Taisuke Maruyama

Masahiko Mizuguchi

Akio Tsumasaka

Tomohiro Kota

Kotaro Kihara

Tadamichi Sasaki

Fumiko Tateno

Kojiro Ohsaki

Ryutaro Kato

A performance of a memory cell including a ferroelectric film is improved. Reliability of the memory cell is ensured. A semiconductor device having a memory cell includes: a plurality of semiconductor layers configuring a channel region; a pair of semiconductor layers SIprovided so as to sandwich the plurality of semiconductor layers SIin an X direction, connected to the plurality of semiconductor layers SI, and configuring a source region and a drain region; a plurality of paraelectric films IL covering outer peripheries of the plurality of semiconductor layers SI, respectively; a bottom electrode BE covering outer peripheries of the plurality of paraelectric films IL between the pair of semiconductor layers SI; a ferroelectric film FE formed on the bottom electrode BE; and a top electrode TE formed on the ferroelectric film FE.

Semiconductor device and method of manufacturing the same

A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.

A Semiconductor device includes a semiconductor substrate, an insulating film, a first conductive film, a ferroelectric film, an insulating layer, a first plug and a second plug. The semiconductor substrate includes a source region and a drain region which are formed on a main surface thereof. The insulating film is formed on the semiconductor substrate such that the insulating film is located between the source region and the drain region in a plan view. The first conductive film is formed on the insulating film. The ferroelectric film is formed on the first conductive film. The insulating layer covers the first conductive film and the ferroelectric film. The first plug reaches the first conductive film. The second plug reaches the ferroelectric film. A material of the ferroelectric film includes hafnium and oxygen. In plan view, a size of the ferroelectric film is smaller than a size of the insulating film.

Semiconductor device

In a semiconductor device having MONOS memories configured by fin-type MISFETs, an increase in parasitic capacitance between wirings accompanying miniaturization of the semiconductor device is prevented, and the reliability of the semiconductor device is improved. In a memory cell array in which a plurality of MONOS type memory cells formed on fins are arranged, source regions formed on the plurality of fins arranged in a short direction of the fin are electrically connected to each other by one epitaxial layer straddling the fins.

Semiconductor memory device including separated epitaxial layers

A rotary electric machine unit includes a rotary electric machine, where a protruding portion extending in an axial direction from a one end side cover portion toward the rotary electric machine is formed at a position below a rotation axis of the rotary electric machine and overlapping with the rotary electric machine. A refrigerant flow lower surface formed on a tip end side of the protruding portion and extending in the axial direction, and a recessed surface adjacent to a base side end portion of the refrigerant flow lower surface and extending in the axial direction at a position recessed upward than the refrigerant flow lower surface are formed below a center of the protruding portion in the upper-lower direction. The refrigerant flow lower surface of the protruding portion is arranged such that an axial central portion overlaps the rotary electric machine in the axial direction.

Rotary electric machine unit

A method for manufacturing a semiconductor device to provide a Metal Insulator Semiconductor Field Effect Transistor (MISFET) in a first region of a semiconductor substrate includes forming a first gate insulating film on the semiconductor substrate in the first region, forming a first gate electrode containing silicon on the first gate insulating film, forming first impurity regions inside the semiconductor substrate so as to sandwich the first gate electrode in the first region, the first impurity regions configuring a part of a first source region and a part of a first drain region, forming a first silicide layer on the first impurity region, forming a first insulating film on the semiconductor substrate so as to cover the first gate electrode and the first silicide layer, polishing the first insulating film so as to expose the first gate electrode, and forming a second silicide layer on the first gate electrode.

Semiconductor method for manufacturing a device including silicides of different composition concentrations on the gate electrode and diffusion regions

Provided is an imaging device including: as assistant control unit that determines, on the basis of user's proficiency level information regarding imaging, an item presented to assist the imaging; and a presentation unit that presents item information, which is information regarding the item, to the user.

Imaging device, imaging method, and program

To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

Method of manufacturing semiconductor device

A semiconductor device includes a semiconductor substrate, an insulating film, a ferroelectric film, a first seed layer and a control gate electrode. The semiconductor substrate includes a source region and a drain region which are formed on a main surface of the semiconductor substrate. The insulating film is formed on the main surface of the semiconductor substrate such that the insulating film is positioned between the source region and the drain region in a plan view. The ferroelectric film is formed on the insulating film and includes hafnium and oxygen. The first seed layer is formed on the ferroelectric film. The control gate electrode is formed on the ferroelectric film. A material of the first seed layer includes at least one material of the ferroelectric film and at least one material of the first conductive film.

A first amorphous film including hafnium, oxygen and a first element is formed, and a plurality of grains including a second element which differs from any of hafnium, oxygen and the first element is formed on the first amorphous film. An insulating film including a third element that differs from any of hafnium and the second element is formed over the plurality of grains and the first amorphous film, thereby forming a plurality of grains including the second element and the third element. A second amorphous film including the same materials as those of the first amorphous film is formed on the plurality of grains and the first amorphous film. By performing heat treatment, the first amorphous film and the second amorphous film are crystallized to form a first ferroelectric film which is an orthorhombic and a second ferroelectric film which is an orthorhombic, respectively.

Semiconductor device including ferroelectric film and method of manufacturing the same

An insulating paper () is inserted into a slot () of a stator core () of a rotary electric machine and insulates between the stator core () and a stator coil () disposed in the slot (). An insulating member () comprises a sheet-shaped insulating base material (), and a first adhesive layer (A) which is provided on a first surface () of the insulating base material () and which is formed of an adhesive. The first adhesive layer (A) is provided with an exposed section () which extends in the axial direction of the stator core () and in which the insulating base material () is exposed from the adhesive.

Insulating member, stator of rotary electric machine, and rotary electric machine

An information processing apparatus includes a control unit configured to determine a setting of a light emitting unit according to concept data indicating a characteristic of a desired image and a light emission result of the light emitting unit.

Information processing apparatus, information processing method, program, and lighting system

An electric rotary machine includes a rotor and a stator disposed radially outward of the rotor. The rotor includes a rotor shaft, a rotor core, a plurality of magnetic pole portions, a first end plate, and a second end plate. The first end plate includes a refrigerant discharge hole, a first groove portion communicating with a refrigerant flow path and communicating with a first refrigerant flow path hole, and a second groove portion communicating with the first groove portion and communicating with a refrigerant discharge hole of the first end plate. The second end plate includes a refrigerant discharge hole, and a third groove portion communicating with the first refrigerant flow path hole and communicating with a refrigerant discharge hole of the second end plate.

Electric rotary machine

A rotary electric machine of the embodiment includes a stator having a cylindrical stator core and a coil attached to the stator core, and a rotor disposed on a radially inward side of the stator, in which the rotor includes a rotor core having a rotor internal flow path through which a refrigerant can flow by axial cooling, and an end surface plate disposed at an end portion in an axial direction of the rotor core, the end surface plate includes a refrigerant flow hole which communicates with the rotor internal flow path, and a refrigerant passage groove which connects together the refrigerant flow hole and an outer circumferential edge of the end surface plate, and a radially outer groove width is equal to or smaller than a radially inner groove width in the refrigerant passage groove when viewed from the axial direction.

Rotary electric machine

Growing community of inventors

Tokyo, Japan

Tadashi Yamaguchi