Tokyo Shibaura Denki Kabushiki Kaisha

Tadashi Utagawa

Hidetoshi Nozaki

Takaaki Kamimura

Tsuneo Tsukakoshi

Tamothu Hatayama

Akio Nakagawa

A planar type semiconductor device having a high breakdown voltage, including a diffusion region of a P type formed in a semiconductor layer of an N type, a guard ring region of the P type formed in the semiconductor layer and surrounding the diffusion layer, and an insulating film covering the surface of the semiconductor layer between the diffusion and guard ring region. A field plate is provided which is kept at a potential equal to that of the diffusion region. The field plate covers the entire surface of that portion of the insulating film which is between the diffusion and guard ring regions.

Planar type semiconductor device with a high breakdown voltage

A photovoltaic device comprises a transparent substrate, an amorphous silicon layer structure of a p-i-n type formed on the substrate and comprised of a p-layer, i-layer and n-layer, and an electrode formed on the amorphous silicon layer structure, wherein either the p-layer and n-layer of the amorphous silicon layer structure, on which light is incident is constituted such that its optical forbidden band gap is greater on the i-layer side than on the substrate side.

Growing community of inventors

Yokohama, Japan

Tadashi Utagawa