Sumitomo Electric Industries, Limited

Sumitomo Wiring Systems, Limited

Autonetworks Technologies, Limited

Research Institute of Innovative Technology for the Earth

Tadashi Tomikawa

Nobuhiko Fujita

Tunenobu Kimoto

Yoshiki Nishibayashi

Shin-ichi Shikata

Tomoki Kanou

Shigeki Yamane

Tsunenobu Kimoto

Masayuki Ishii

Shinji Kawakita

Shoji Nakagama

Hiromu Shiomi

Shinichi Shikata

Yoshiyuki Hirose

Hirohisa Saito

Akira Nakayama

Futoshi Nishida

Naohiro Toda

Tsuyoshi Hosokawa

Tomoki Kano

Shogo Hashimoto

Shyoji Nakagama

Hayato Fukushima

It is an object to effectively reduce minute clearances generated between a heat radiating member and a vehicle body and ensure good cooling performance while avoiding the occurrence of impact and noise caused by the vibration of a vehicle. A circuit unit U is mounted such that an outer surfaceB of the heat radiating memberto which the circuit bodyis fixed faces a body surface S of the vehicle with a clearance. Preferably, the mounting partfixed to the body of the vehicle is extended, the surfaceof the mounting partwhich is in contact with the body is positioned to be substantially parallel to the outer surfaceB of the heat radiating member and a step is provided in both surfacesB. In a mounted state, the body and the outer surfaceB of the heat radiating member are facing each other in a substantially parallel state and a clearance is formed between the body and the outer surface of the heat radiating member over the entire area excluding the mounting part

Mounting structure of on-vehicle circuit unit and on-vehicle circuit unit

A circuit configuration member has a space capable of storing a resin in a liquid state is formed on the adhering face and on an inner side of the case main body. The adhering face of the heat radiating member and the circuit configuration member are adhered by an adhering member at inside of the space by integrally molding the case main body arranged to surround the circuit configuration member and the heat radiating member.

Method of fabricating circuit configuration member

A casingsurrounding a circuit structureconsists of a frame, a heat sinklocated in a rear side of the circuit structureand a coverlocated in a front side. The frameis in a two-component structure consisting of a first frame membershaped a capital letter C and a second frame memberdisposed in a rear side of a first terminal partA. Thereby, before implementing a switching member, the circuit structurecan be bonded to the heat sinkand, thereafter, the first frame memberand the second frame memberare separately fixed to the heat sinkso that the framesurrounding the circuit structurefrom the periphery can be completed.

Electric junction box

Circuit configuration member and method of fabricating the same

An electrical connection box is to be attached to an attachment objective member. The electrical connection box includes: a circuit housing that accommodates a circuit substrate; a fuse box that detachably accommodates a fuse element, the fuse box being provided at an upper portion of the circuit housing in a state where the electrical connection box being attached to the attachment objective member; a plurality of bus bars that connect the circuit substrate and the fuse element; and a water-discharge channel that discharges water flowed into the fuse box to outside of the electrical connection box, the water-discharge channel being provided at a lower part of the bus bars in a state where the electrical connection box is attached to the attachment objective member, and at a position between the circuit housing and the fuse box.

Electrical connection box

An electrical connection box is described that includes a plurality of connector parts provided on a circuit substrate. Each of the plurality of connector parts may be provided at a different portion of the circuit substrate and may include an engaging portion that may engage with a mating connector part that is exposed outward from the case. In one exemplary embodiment, the connector parts are arrayed, respectively, on an upper circuit substrate and a lower circuit substrate. Therefore, cables extended from the upper connector part and cables extended from the lower connector part may be drawn from the mating connector in parallel and may be easily handled. For example, cables extended from the upper connector part and cables extended from the lower connector part run in parallel and in the same direction with the substrate, thereby making it possible to easily package the cables into one bundle.

To provide a heater module which can improve the temperature uniformity in an optical waveguide while keeping the power consumption and the thickness of the optical waveguide module. A heater module in accordance with the present invention is a heater module for heating an optical waveguide device so as to regulate its temperature; and comprises a heat-generating circuit adapted to generate heat when energized, and a heat-transmitting section disposed on the upper face of the heat-generating circuit and formed with a recessed groove portion for mounting the optical waveguide device When the optical waveguide device is mounted on the bottom face of the heat-transmitting section formed with the recessed groove section, the optical waveguide device can be heated not only from its bottom face, but also from its side faces by edge parts constituting the recessed groove portion, whereby the temperature uniformity can be enhanced.

Heater module and optical waveguide module

A highly reliable connecting lead for devices that mount semiconductors. The lead is made of copper or copper alloy. The thickness of the oxide film at the interface between the copper or copper alloy lead and an aluminum bump electrode is 10 nm or less. The contents of oxygen and carbon in the aluminum bump electrode are 1 atm % or less each.

Connecting lead for semiconductor devices and method for fabricating the

A field emission device according to the present invention comprises a support substrate; a cathode mounted on a surface of said support substrate; a first diamond portion located on any surface of said substrate, said first diamond portion substantially having an electrical connection with said cathode; a second diamond portion located on the substrate surface on which said first diamond portion is also located, said second diamond portion including plurality of diamond protuberances; and an anode positioned spaced apart from said first and second diamond portions, wherein a space is formed between said anode and said second diamond portion.

Field emission devices having diamond field emitter, methods for making

An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistance and high heat resistance, and a lead electrode layer formed on the contact electrode layer so as to have low lead wire resistance and high heat resistance. Specifically, the contact electrode layer is made of either a carbide of at least one metal selected from a metal group comprising Ti, Zr, and Hf, or a carbide of an alloy containing at least one metal selected from the metal group. Since the carbide of the metal or alloy forming the contact electrode layer is stabler in respect of energy because of reduced formation enthalpy than the metal or alloy itself, it is very unlikely to diffuse. Therefore, little metal or alloy forming the contact electrode layer precipitates on the surface of the lead electrode layer formed on the contact electrode layer, thus improving the device performance, based on the reduced lead wire resistance.

Ohmic electrode and method for forming it

A diamond semiconductor device of the present invention comprises an n-type diamond layer to which an n-type dopant is doped at high concentration so that metal conduction dominates, a p-type diamond layer to which a p-type dopant is doped at high concentration so that metal conduction dominates, and a high resistance diamond layer formed between the n-type diamond layer and the p-type diamond layer. Here, the thickness and the doping concentration of the high resistance diamond layer are values at which semiconductor conduction dominates. Then, in a case that an applied voltage is forward bias, electrons are injected from the n-type region to the p-type region through the conduction band of the high resistance region, and holes are injected from the p-type region to the n-type region through the valance band of the high resistance region, so that a current flows. On the other hand, in a case that an applied voltage is reverse bias because substantially no dopant is doped to the high resistance diamond layer, carriers are not present, so that a large current does not flow. Therefore, semiconductor conduction dominates as carrier conduction in pn junction and the rectification can be obtained, so that with the control of carriers, good diode characteristics or transistor characteristics can be achieved.

Diamond semiconductor device with P-I-N type multilayer structure

An electron device of the present invention comprises an i-type diamond layer formed on a substrate, and an n-type diamond layer formed on the i-type diamond layer and having a first surface region formed flatly and a second surface region containing an emitter portion, which are set in a vacuum container, in which the emitter portion formed of the n-type diamond has a bottom area 10 or less .mu.m square and projects relative to the first surface region. In the n-type diamond layer, a difference is fine between the conduction band and the vacuum level. Also, since the n-type diamond layer is doped with an n-type dopant in a high concentration, metal conduction is dominant as conduction of electrons. Therefore, setting the temperature of the substrate at a predetermined temperature and generating an electric field near the surface of the emitter portion, electrons are emitted with a high efficiency from the tip portion of the emitter portion into the vacuum. Even though the emitter portion does not have a tip portion formed in a very fine shape, electrons can readily be taken out into the vacuum by the field emission with relatively small field strength. Consequently, the emission current and the current gain increase and the current density in the emitter portion decreases, thus increasing the withstand current or withstand voltage.

Electron device

N-type c-BN is a heat-resistant material with a wide band gap. Ohmic electrodes are indispensable for making semiconductor devices utilizing n-type c-BN. The electrodes proposed so far are likely to deteriorate in an atmosphere of high temperature. The degradation of electrodes hinders the production of semiconductor devices utilizing c-BN. A heat-resistant ohmic electrode is produced by forming a low contact resistance layer of a boride or a nitride of Ti, Zr or Hf on a heated c-BN and by covering the low resistance layer by an Au layer. Otherwise an ohmic electrode is produced by forming a low contact resistance layer of one of Ti, Zr, Hf, etc. on c-BN, making a diffusion barrier layer of W, Mo, Ta or Pt and depositing an Au layer on the diffusion barrier layer.

Ohmic electrode of n-type semiconductor cubic boron nitride and method

A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.

Semiconductor heterojunction structure

An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal or an alloy with a IVa metal or a layer of Au or Ag.

Growing community of inventors

Itami, Japan

Tadashi Tomikawa