Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Tadashi Terasaki

Masanori Nakayama

Unryu Ogawa

Akito Hirano

Tatsushi Ueda

Teruo Yoshino

Takeshi Yasui

Koichiro Harada

Masaki Murobayashi

Satoshi Shimamoto

Hirotaka Hamamura

Katsunori Funaki

Katsuhiko Yamamoto

Shinji Yashima

Mitsunori Takeshita

Yoshiki Yonamoto

Naoya Yamakado

Tadashi Horie

A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium

Method of manufacturing semiconductor device, and recording medium

A method of manufacturing a semiconductor device includes: loading a substrate into a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate process space communicating with the plasma generation space; mounting the substrate on a substrate mounting table installed inside the substrate process space; adjusting a height of the substrate mounting table so that the substrate is located at a height lower than a lower end of a coil, the coil configured to wind around an outer periphery of the plasma generation space so as to have a diameter larger than a diameter of the substrate; supplying the processing gas to the plasma generation space; plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil; and processing the substrate mounted on the substrate mounting table by the plasma-excitation.

A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.

Substrate processing method and substrate processing apparatus

A method of manufacturing a semiconductor device includes: processing a substrate by operating a processing apparatus included in a substrate processing apparatus, based on a first process setting; acquiring apparatus data of the processing apparatus when processing the substrate; generating first evaluation data of the processing apparatus based on an evaluation factor corresponding to the first process setting and the apparatus data; determining one or more recipe items executable in the processing apparatus based on the first evaluation data; and notifying the one or more recipe items.

Method of manufacturing semiconductor device

Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).

A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.

Substrate processing apparatus and method of manufacturing semiconductor device

A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

A manufacturing method for a semiconductor device, that loads a substrate on which a film containing oxygen atoms, chlorine atoms, and metal atoms is formed into a processing chamber so as to be supported by a substrate support part. The substrate is heated by the substrate support part. The inside of the processing chamber is exhausted by a gas exhaust part while supplying nitrogen atoms-containing gas and hydorgen atoms-containing gas into the processing chamber by a gas supply part. A plasma generation part is then used to excite the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber.

Substrate processing apparatus and manufacturing method of semiconductor device using plasma generation

A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation

A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.

Manufacturing method of semiconductor device and substrate processing apparatus

Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

Growing community of inventors

Imizu, Japan

Tadashi Terasaki