Sharp Kabushiki Kaisha Corporation

Tadashi Takeoka

Masanori Watanabe

Mitsuhiro Matsumoto

Hiroshi Nakatsu

Yoshihiko Tani

Kazuaki Sasaki

Osamu Yamamoto

Saburo Yamamoto

Sadayoshi Matsui

Yoshihiro Ueta

Masaki Kondo

Atsuo Tsunoda

Tetsuya Hanamoto

Masahiro Hosoda

Tomoya Inoue

Kentaro Tani

Yasuo Kan

Fumie Kunimasa

Akihiro Kurisu

Toshiaki Asai

Akiyoshi Sugahara

Kentaro Nonaka

Takuroh Ishikura

Mathieu Senes

Kazuya Araki

A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width &#x3c9; (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width &#x3c9; (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25&#xb0; C. and light output P (80) at 80&#xb0; C. with a same operating current is 95% or more.

Nitride semiconductor light emitting element and method for manufacturing same

A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.

Nitride semiconductor light-emitting element

A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.

Nitride semiconductor light-emitting device and method for producing the same

A semiconductor laser device manufacturing method includes, sequentially, a first aging step Sa first inspection step Sa mounting step Sa second aging step Sand a second inspection step SSince the first aging step Son a semiconductor laser chip with a high-temperature direct current conduction is performed before the mounting step Sthreshold current and drive current of the semiconductor laser chip before mounting can be reduced.

Semiconductor laser device manufacturing method and semiconductor laser device

In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity type upper cladding layer are formed in this order on a semiconductor substrate, a dopant concentration of the lower cladding layer is not more than 4.0&#xd7;10/cm, and a resonator length is not less than 1500 &#x3bc;m.

Semiconductor laser and electronic device

The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

Semiconductor laser and fabricating method thereof

By using a single semiconductor laser device, laser beams in infrared and red regions are generated at a distance between close light emitting spots. A semiconductor laser resonator having an oscillation wavelength in an infrared region and a semiconductor laser resonator having an oscillation wavelength in a red region are formed in parallel on the same semiconductor substrate.

Semiconductor device with multiple laser resonators

A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.

Self-pulsation type semiconductor laser device

In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.

Semiconductor light-emitting device

A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

Light-emitting diode having a surface electrode of a tree-like form

A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

Growing community of inventors

Osaka, Japan

Tadashi Takeoka