Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Tadashi Takasaki

Naofumi Ohashi

Shun Matsui

Yasuhiro Mizuguchi

Teruo Yoshino

Toshiyuki Kikuchi

Kazuyuki Toyoda

Hidehiro Yanai

Atsushi Sano

Hiroshi Ashihara

Takashi Yahata

Kazuhiro Morimitsu

Takafumi Sasaki

Yoshihiko Yanagisawa

Mitsuro Tanabe

Yoshiro Hirose

Naonori Akae

Yukinori Aburatani

Takashi Nakagawa

Tetsuo Yamamoto

Harunobu Sakuma

Keita Ichimura

Satoshi Takano

Eisuke Nishitani

Tsukasa Kamakura

Yukitomo Hirochi

Kenji Ono

Ikuo Hirose

There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium

There is provided a technique that includes: a process container processing one or more substrates; a support installed inside the process container and supporting the substrates; a first gas supplier capable of supplying gas in the process container; a second gas supplier capable of supplying in the process container; an exhaust buffer structure installed along outer circumference of the support; a third gas supplier capable of supplying first cleaning gas to the exhaust buffer structure; a fourth gas supplier capable of supplying second cleaning gas onto the support; and a controller configured to control the third and fourth gas suppliers to control a frequency or number of times for supplying each of the first and the second cleaning gas, or a supply time of each of the first and second cleaning gases, such that over-etching in the exhaust buffer structure or in the support is prevented.

Substrate processing apparatus with cleaning of exhaust system

Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Substrate processing apparatus

Some embodiments of the present disclosure provide a technique capable of reducing an amount of deposits on a back surface of a rotary table. According to one aspect thereof, there is provided a technique that includes: a process chamber provided with process regions; a rotary table configured to rotate a substrate about a point outside the substrate such that the substrate sequentially passes through the process regions; and a rotator configured to rotate the rotary table, wherein the process regions include: a first region in which a process gas is supplied; and a second region in which an inert gas is supplied, and wherein a space corresponding to the second region below the rotary table is configured such that a pressure at the space corresponding to the second region below the rotary table is higher than a pressure at a space corresponding to the first region below the rotary table.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1).

Processing method, method of manufacturing semiconductor, and substrate processing apparatus

There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber wherein a maintenance timing at which the process chamber enters into a maintenance enable state is determined by the maintenance reservation information; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, stopping one or more substrates including the substrate from being transferred into the process chamber, and thereafter setting the process chamber to the maintenance enable state.

Method of manufacturing semiconductor device by setting process chamber maintenance enable state

A substrate processing apparatus includes a plurality of storage containers mounted on a load port, each storage container storing a plurality of substrates; a plurality of process chambers for accommodating the substrates; a transfer part for transferring the substrates; a memory for storing data tables, including first count data, for the process chambers; an operation part, when multiple substrates in the first storage container is transferred to the process chambers in a predetermined order and performs a predetermined process in the process chambers in a state in which no substrate is present in a first process chamber, counting first count data for the first process chamber; and a controller assigns flag data to a data table of a process chamber having largest first count data and when multiple substrates in the second storage container is transferred, control the transfer part based on the flag data from a different process chamber.

Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

There is provided a technique that includes a plurality of substrate processing apparatuses each configured to process a substrate; a first controller installed in each substrate processing apparatus among the plurality of substrate processing apparatuses and configured to control the substrate processing apparatus; a relay configured to receive a plurality of types of data from the first controller; and a second controller configured to receive the data from the relay, wherein the relay is configured to change a transmission interval of the data to the second controller according to one of each type of the data and each first controller, or according to both of each type of the data and each first controller.

Substrate processing system, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

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Toyama, Japan

Tadashi Takasaki