Nagase Co., Ltd.

Tadashi Takano

Michihiro Sato

The present invention relates to a method for manufacturing a semiconductor device in which a circuit element including a semiconductor chip, and a through conductor connecting an insulation layer in a thickness direction are embedded in the insulation layer. A wiring structure in which a predetermined pattern of wiring conductors is formed along a planar direction on an insulation part is created, and thereafter the wiring structure is sealed in the insulation layer in a state where the wiring structure is erected vertically. Consequently, the wiring conductor of the wiring conductor is caused to function as the through conductor in the insulation layer.

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Columbus, OH, United States of America

Tadashi Takano