Mitsubishi Metal Corporation

Mitsubishi Materials Corporation

Tadashi Sugihara

Takuo Takeshita

Yukihiro Ohuchi

Takeshi Sakurai

Ji-bin Yang

Shuichi Fujino

Kazutoshi Inoue

Kazushi Yoshida

Yoshio Murakami

Isao Suzuki

Yukihiro Ouchi

A shaft having a magnetostrictive sensor measures torque applied to a shaft, as a shaft, without contact and utilizing reverse-magnetostrictive properties of magnetic alloys. The shaft includes a plurality of magnetic alloy layers, and the magnetosensitive torque detector is variously formed by diffusion bonding a magnetostrictive layer with a high magnetostrictive constant onto the shaft surface, by heat treating, adhesive fixation or the like bonding means. Methods for making the shaft are disclosed.

Shaft having a magnetostrictive torque sensor and a method for making

Process for producing Bi-Ca-Sr-Cu-O, TL-Ca-Sr-Cu-O and Tl-Ba-Ca-Cu-O

A target used for forming a thin film of a quinary superconductive oxide contains metal copper ranging between about 8% and about 40% by volume dispersed into a quaternary or a quinary complex oxide, and the metal copper improves the thermal conductivity and the electrical conductivity of the target, so that cracks are less liable to take place in the target and the target is applicable to a d.c. sputtering system, thereby decreasing the production cost of the thin film.

Sputtering target used for forming quinary superconductive oxide

Process of forming superconductive wiring strip

A method for fabricating a low resistivity target for sputtering a bismuth-calcium-strontium-copper oxide superconductor. The method includes the steps of: preparing ingredient powders of a calcium carbonate, a strontium carbonate and a copper oxide; producing a porous bulk body of a complex oxide from the ingredient powders; and impregnating molten bismuth into the porous bulk body of the complex oxide.

Method of making a sputtering target for a bismuth based superconductor

Target member used for formation of superconducting film

A Ca carbonate powder, a Sr carbonate powder, and a Cu oxide powder are mixed in predetermined proportions, and sintered at a first predetermined temperature into a Ca-Sr-Cu--O oxide sintered body. A Bi oxide powder and a Pb oxide powder are mixed in predetermined proportions, and are sintered at a second predetermined temperature into a Bi--Pb--O oxide sintered body. The obtained Ca--Sr--Cu--O oxide sintered body and Bi--Pb--O oxide sintered body are crushed, and the resulting Ca--Sr--Cu--O oxide powder and Bi--Pb--O oxide powder are mixed in predetermined proportions. The resulting mixed powder is sintered at a third predetermined temperature into a Bi--Pb--Sr--Ca--Cu--O superconductive oxide sintered body, which is crushed into a powder of a Bi-based superconductive oxide containing Pb. A sintered body of the Bi-based superconductive oxide containing Pb is formed from the Bi-based superconductive oxide powder. According to another method, a sintered body of a Bi-based superconductive oxide containing Pb may be manufactured such that a Bi oxide powder and a Pb oxide powder are mixed in predetermined proportions, and sintered at a predetermined temperature into a Bi--Pb-- O oxide sintered body. The Bi--Pb--O oxide sintered body is crushed into a powder, followed by mixing the powder with a Bi--Sr--Ca--Cu--O oxide powder in predetermined proportions into a mixed powder. The above Bi-based superconductive oxide sintered body is formed from the last-mentioned mixed powder.

Method of manufacturing a powder of bi-based superconductive oxide

Structure of superconductive wiring having SiAlON buffer layer thereunder

A superconductive ceramic thin film-formed single-crystal wafer comprising a single-crystal wafer, an intermediate ceramic thin film formed on a surface of the single-crystal wafer, and a superconductive ceramic thin film formed on the intermediate ceramic thin film. The intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio of Bi.sub.2 Sr.sub.2 Ca.sub.x O.sub.y (provided that x: 1 to 2; and y: 6 to 7), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10. Alternatively, the intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl.sub.1 Ba.sub.2 Ca.sub.s O.sub.t (provided that s: 1 to 2; and t: 4.5 to 5.5) and Tl.sub.2 Ba.sub.2 Ca.sub.v O.sub.w (provided that v: 1 to 3; and w: 6 to 8), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl.sub.2 Ba.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8, Tl.sub.1 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10, Tl.sub.1 Ba.sub.2 Ca.sub.1 Cu.sub.2 O.sub.7, Tl.sub.1 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.9, and Tl.sub.1 Ba.sub.2 Ca.sub.3 Cu.sub.4 O.sub.11.

Single-crystal wafer having a superconductive ceramic thin film formed

A target for forming a superconductive oxide film consists of 5 to 40% by volume of metallic copper and 60 to 95% by volume of an oxygen compound of barium and copper, strontium, calcium and copper, or barium, calcium and copper dispersed in the metallic copper, and the target is improved in thermal conductivity, electric resistivity and mechanical strength, because the metallic copper is large in those properties.

Target used for formation of superconductive oxide film, process of

A superconductor according to the present invention contains an internal stress absorbing substance of a copper oxide and/or a barium oxide distributed over the superconductive oxide, so that the superconductor is free from cracks due to thermal stresses produced in a heat treatment.

Growing community of inventors

Saitama, Japan

Tadashi Sugihara