Tokyo Shibaura Denki Kabushiki Kaisha

Tadashi Shibata

Hisakazu Iizuka

A method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electric conductive portion such as an electrode and/or conductor, which includes steps for doping the polycrystalline silicon layer with an impurity, and applying a radiation beam at least to part of the polycrystalline silicon layer after a heating step, thereby reducing the resistance of the polycrystalline silicon layer thereby to improve the operating speed of the device.

Method for manufacturing a semiconductor device

Disclosed is a method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electrode and/or wire which includes a process for applying a laser light or electron beam to the polycrystalline silicon layer prior to a patterning process, thereby preventing over-etching and diffusion of impurity into the surface of a semiconductor substrate which are liable to be caused in the manufacturing processes, facilitating patterning in a desired manner, and reducing the resistance of the polycrystalline silicon layer to improve the operating speed of the device.

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Menlo Park, CA, United States of America

Tadashi Shibata