Nippon Steel Corporation

Nsc Electron Corporation

Nippon Steel Sumitomo Metal Corporation

Jeol Ltd.

Teikoku Oil Co., Ltd.

Tadashi Sakon

Wataru Ito

Hiromasa Shoji

Noriko Yamada

Kenichiro Tadokoro

Toru Nagai

Hitoshi Dohnomae

Toru Takahashi

Yoichi Matsuzaki

Kenichi Uemura

Atsushi Nogami

Shingo Katayama

Ikuko Shiina

Ikuo Jitsuhara

Takashi Ito

Yasuo Ikeda

Masao Sakashita

Masaharu Tachimori

Yoshihiro Kaneda

Kengo Shimanoe

Makoto Yamasaki

Hideki Kurimura

Keiko Kawakami

Maki Sekoguchi

Makoto Yamazaki

Eiichi Kuboyama

Daisuke Sawada

Yoshiyuki Harada

Youhei Suzuki

Takayuki Kaneko

Seizou Meguro

Yoshihiro Mori

Susumu Ohtsuka

Shuji Munehira

Shouichi Kaganoi

Yutaka Kishida

The present invention provides a method of cleaning steel sheet, said method of cleaning steel sheet feeding a cleaning solution activated by ultrasonic waves of a frequency of 0.8 MHz to 3 MHz to a surface of steel sheet at an angle inclined by 1 to 80&#xb0; with respect to a line perpendicular to the surface of the steel sheet in a direction opposite to the running direction, thereby enabling megasonic waves to be applied to cleaning of running steel sheet and improving the cleaning effect and cleaning speed, and a continuous cleaning system of steel sheet.

Method of cleaning steel sheet and continuous cleaning system of steel sheet

A sealing technique is established in which a seal can be easily formed and which is excellent in reliability and a heat cycle property in a high temperature region of 800&#xb0; C. or higher, so as to provide a composite body preferably used for a device for producing pure oxygen, oxygen-rich air, and the like, a membrane reactor represented by that for partial oxidation of a hydrocarbon gas, a solid oxide fuel cell, an oxygen purification device, a heat exchanger, or the like. The present invention makes it possible to increase a possibility of practical use in a wide area which has been delayed in development owing to a bottleneck of improvement in a sealing property. Particularly, its application to the device for producing pure oxygen, oxygen-rich air, or the like, the membrane reactor represented by that for partial oxidation of the hydrocarbon gas, the solid oxide fuel cell, the oxygen purification device, the heat exchanger, or the like can greatly contribute to acceleration of the development.

Ceramic-metal composite body, composite structure for transporting oxide ion, and composite body having sealing property

A porous catalyst layer containing mixed conducting oxide having substantially a perovskite structure and containing a first element selected from Co and Fe, and a second element selected from In, Sn and Y arranged in the B site in the perovskite structure is contiguous to a second surface () of a selective oxygen-permeable dense continuous layer () containing mixed conducting oxide. A porous intermediate catalyst layer () containing mixed conducting oxide and at least one of Co, Fe, Mn and Pd is contiguous to a first layer () of the dense continuous layer (1). A porous reactive catalyst layer () provided with a metal catalyst selected from at least one of Ni, Co, Ru, Rh, Pt, Pd, Ir and Re and a support is continguous to the porous intermediate catalyst layer () in a manner to sandwich between the dense continuous layer () and the porous reactive catalyst layer ().

Porcelain composition, composite material comprising catalyst and ceramic, film reactor, method for producing synthetic gas, apparatus for producing synthetic gas and method for activating catalyst

A ceramic composite with a mixed conducting oxide that has perovskite type crystal structure of {LnA}{BB'B&#x2033;}Owhere a, x, y, and z are within the range of 0.8&#x2266;a&#x2266;1, 0&#x3c;x, 0&#x3c;y&#x2266;0.5, 0&#x2266;z&#x2266;0.2, 0.98&#x2266;x+y+z&#x2266;1.02, and &#x3b4; denotes a value that is determined so as to meet a charge neutralization condition. A denotes a combination of one or more kinds of elements selected out of Ba, Sr, and Ca. B denotes a combination of one or more kinds of elements selected out of Co, Fe, Cr, and Ga, the combination always containing Fe or Co. B&#x2032; denotes a combination of one or more kinds of elements selected out of Nb, Ta, Ti, and Zr, the combination always containing Nb or Ta. The present invention is also directed to a mixed conducting oxide and a ceramic composite. The mixed conducting oxide is of formula AFeOA is selected out of Ba, Sr, and Ca, and is within the range of 0.98&#x2266;x&#x2266;1.02, and &#x3b4; denotes a value determined so as to meet the charge neutralization conditions.

Ceramic composition, composite material, composite material production method, porous body, oxygen separator, and chemical reactor

Silica-based low dielectric constant materials having three-dimensional network structures containing siloxane backbones which comprise SiO tetrahedron structural units, as well as their production and use. The materials can be applied as interlayer dielectrics for semiconductor elements and the like.

Low dielectric constant materials and their production and use

A metal plate having a rust preventive organic layer, said rust-preventive organic layer being a colloid or micelle of a slightly water soluble organic corrosion inhibitor as an organic layer mixed with and dispersed in a matrix resin, its production process and a treatment liquid in which it is processed.

Metallic sheet having rust-preventive organic coating thereon, process for the production thereof and treating fluid therefor

Surface treated metal materials with corrosion-resistant coating layers composed mainly of oxyacid compounds of rare earth elements (lanthanum, cerium, etc.) or Group IVA elements (zirconium, etc.), oxyacids or mixtures thereof. The corrosion resistant coating layers may also contain resins. Also provided are corrosion resistant coating layers containing rare earth element and Group IVA element compounds in resin matrixes. The corrosion resistant coating layers, particularly inorganic layers, may be covered with resin layers.

Surface treated metal material and surface treating agent

Surface-treated steel sheet with resin-based chemical treatment coating

A method and apparatus for determining an abnormal component of blood functions is described. A whole blood sample is cycled as a laminar flow through a flow cell having a measuring element prepared by plating the surface of a plate-shaped quartz oscillator with a protein layer. The amount of adhesion of the blood component on the protein layer is determined on the basis of the change in resonance frequency of the measuring element. The measured value is compared with a standard value of adhesion for blood from a healthy individual.

Determination of abnormal part of blood functions

A cleaning solution for achieving highly accurate cleaning of silicon semiconductors and silicon oxides. The solution which enables a great reduction in the metal contaminants and the number of fine particles adhered on the surfaces and retention of the hydrophilic property of the surfaces to prevent the surfaces from being unstable, comprising an aqueous acidic solution containing 0.005% by weight or more to less than 0.05% by weight hydrogen fluoride and 0.3% by weight or more to 20.0% by weight or less hydrogen peroxide and having a pH in the range from 1 or more to less than 5.

Solution for cleaning silicon semiconductors and silicon oxides

A single silicon crystal wafer produced by the Czochvalski method and measuring not less than 100 mm in diameter, a single silicon crystal having low OSF density induced by oxidation, wherein regarding the local resistivity measured by the spread resistance method on the surface of said wafer subjected in advance to a heat treatment for extinction of oxygen donor, the proportion of the number of points of measurement registering errors exceeding .+-.1.0% of the mean value is not more than 35% of the total number of points of measurement, and regarding the distribution of oxygen concentration in solid solution in the wafer surface, the difference between the maximum and the minimum is not more than 2.0% of the maximum, and a method for production thereof.

Single silicon crystal having low OSF density induced by oxidation and

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Chiba, Japan

Tadashi Sakon