Fujifilm Corporation

Tadashi Oomatsu

Hirotaka Kitagawa

Yuichiro Goto

Kunihiko Kodama

Tetsuya Kamimura

Yuichiro Enomoto

Satomi Takahashi

Takayuki Ito

Michihiro Shirakawa

Akiyoshi Goto

Kenichi Kodama

Shinji Tarutani

Tetsuya Shimizu

Akinori Fujita

Akiko Hattori

The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Chemical liquid and chemical liquid storage body

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120&#xb0; C. to 155&#xb0; C., a content of the organic solvent having a boiling point of 120&#xb0; C. to 155&#xb0; C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49&#xb0; C.

Treatment liquid and pattern forming method

A resin composition for underlayer film formation capable of forming an underlayer film having good adhesiveness and excellent surface flatness, a layered product, a method for forming a pattern and a process for producing a device are provided. The resin composition for underlayer film formation includes a resin having a group represented by General Formula (A) and a group represented by General Formula (B), and a solvent. Ra1 represents a hydrogen atom or a methyl group, Rb1 and Rb2 each independently represents an unsubstituted linear or branched alkyl group having 1 to 20 carbon atoms or an unsubstituted cycloalkyl group having 3 to 20 carbon atoms, Rb3 represents an unsubstituted linear or branched alkyl group having 2 to 20 carbon atoms or an unsubstituted cycloalkyl group having 3 to 20 carbon atoms, and Rb2 and Rb3 may be bonded to each other to form a ring. 

Resin composition for underlayer film formation, layered product, method for forming pattern, and process for producing device

Provided are a method of manufacturing a porous body capable of easily manufacturing a porous body, a porous body, a method of manufacturing a device, a device, a method of manufacturing a wiring structure, and a wiring structure. A photocurable composition including a condensing gas and a polymerizable compound is applied to a substrate or a mold, the photocurable composition is sandwiched between the substrate and the mold and then the photocurable composition is irradiated with light to cure the photocurable composition, and the mold is released from a surface of the cured photocurable composition.

Method of manufacturing porous body, porous body, method of manufacturing device, device, method of manufacturing wiring structure, and wiring structure

Provided are a resin composition for underlayer film formation with which a variation hardly occurs in the line width distribution after processing due to a small thickness of a residual film after mold pressing, a layered product, a method for forming a pattern, an imprint forming kit, and a process for producing a device. Disclosed is a resin composition for underlayer film formation which is used to form an underlayer film by being applied onto a base material, including a first resin having a radical reactive group in the side chain, a second resin containing at least one selected from a fluorine atom and a silicon atom, and a solvent. The second resin is preferably a resin containing a fluorine atom. The radical reactive group of the first resin is preferably a (meth)acryloyl group.

Resin composition for underlayer film formation, layered product, method for forming pattern, imprint forming kit, and process for producing device

Provided are a resin composition for underlayer film formation with which a variation hardly occurs in the line width distribution after processing due to a small thickness of a residual film after mold pressing, a layered product, a method for forming a pattern, an imprint forming kit, and a process for producing a device. A resin composition for underlayer film formation includes a resin having a group represented by General Formula (A) and at least one group selected from a group represented by General Formula (B), an oxiranyl group and an oxetanyl group, a nonionic surfactant and a solvent. Rrepresents a hydrogen atom or a methyl group, Rand Reach independently represent a group selected from an unsubstituted linear or branched alkyl group having 1 to 20 carbon atoms and an unsubstituted cycloalkyl group having 3 to 20 carbon atoms, Rrepresents a group selected from an unsubstituted linear or branched alkyl group having 2 to 20 carbon atoms and an unsubstituted cycloalkyl group having 3 to 20 carbon atoms, and Rand Rmay be bonded to each other to form a ring. 

Resin composition for underlayer film formation, layered product, method for forming pattern, imprint forming kit and process for producing device

The present invention provides a discharge method which makes it possible to appropriately perform discharge even when a head for discharging microdroplets having a size of equal to or less than 6 pL that is necessary for controlling a residual film (forming a thin film and achieving uniformity) is used, and makes it possible to obtain an excellent pattern having excellent release properties. The discharge method is an inkjet discharge method including discharging a photocurable composition in the form of liquid droplets having a size of equal to or less than 6 pL, in which the composition satisfies the following (a) to (c), (a) containing a fluorine-containing material in a proportion of equal to or less than 4% by mass of the composition; (b) having a surface tension of 25 mN/m to 35 mN/m; and (c) containing a solvent having a boiling point of equal to or less than 200&#xb0; C. in an amount of 5% by mass of the composition.

Inkjet discharge method, pattern formation method, and pattern

Provided is the pattern formability and line edge roughness of the resultant substrate. An underlay film composition for imprints comprising a compound (A) and a solvent (B), the compound (A) having at least either one of a group (Ka) capable of covalently bonding and/or interacting with a substrate, and, a group (Kb) capable of covalently bonding and/or interacting with a curable composition for imprints, an Ohnishi parameter (Z) calculated from (equation 1) of 3.8 or larger, and a molecular weight of 400 or larger:the Ohnishi parameter=(total number of atoms)/(number of carbon atoms&#x2212;number of oxygen atoms).&#x2003;&#x2003;(Equation 1)

Underlay film composition for imprints and method of forming pattern and pattern formation method using the same

A curable composition for nanoimprints which comprises a polycyclic aromatic structure-having polymerizable monomer and a photopolymerization initiator is excellent in mold releasability, etching resistance and solvent resistance and capable of forming patterns.

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Haibara-gun, Japan

Tadashi Oomatsu