Tokyo Electron Limited

Tadashi Onishi

Minoru Honda

Mitsuaki Iwashita

Kazuyuki Mitsuoka

Manabu Hama

Tsuyoshi Moriya

Daisuke Hayashi

Eiichi Nishimura

Kazuya Nagaseki

Ryuichi Asako

Jay R Wallace

Ryo Nonaka

Arthur H Laflamme, Jr

Koichi Murakami

Louise Smith Barriss

Akiko Kamigori

Yoichi Kurono

Richard J Freeman

A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.

Substrate processing system and substrate cleaning apparatus including a jetting apparatus

A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or a film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.

Method of processing an organic-film

In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

Thin film processing method and system

Installed in a vacuum chamber is a mounting table for supporting semiconductor wafer, which is a substrate to be treated, with an electron beam irradiation mechanism mounted on the ceiling of the vacuum chamber for generating electron beams. The mounting table is adapted to be vertically moved by a lifting/lowering device, allowing the distance between the electron beam irradiating mechanism and the semiconductor wafer to be set at a desired value. This makes it possible to perform a uniform satisfactory treatment over the entire surface of the substrate to be treated.

Surface treating device and surface treating method

A film-processing method according to the present invention includes: a processing step of irradiating electron beams onto a film on a surface of an object to be processed to conduct a process to the film; an electric-current measuring step of capturing the electron beams in a vicinity of the object to be processed to measure an electric-current value during the processing step; and a detecting step of detecting an end point of the process to the film, based on an amount of electron obtained by means of a time integration of the electric-current value. According to the present invention, a suitable irradiation of the electron beams onto the film on a surface of the object to be processed can be realized. Thus, a suitable film quality can be obtained.

Film-processing method and film-processing apparatus

The present invention provides an etching system having a plurality of etching chambers ( ) disposed about a transfer chamber ( ), wherein the etching chambers are adapted to be selectively mounted at different positions with respect to the transfer chamber.

Etching system and etching chamber

Growing community of inventors

Nirasaki, Japan

Tadashi Onishi