The Doshisha

Showa Denko K.k.

Tadashi Ohachi

Takashi Udagawa

Motoi Wada

Osamu Ariyada

Nobuhiko Yamabe

An atomic flux measurement device for measuring the amount of dissociated atomic flux produced by discharge and emitted from a plasma generation cell into a vacuum camber. The atomic flux measurement device includes a counter electrode body including a pair of first and second sheet-like electrodes that are arranged substantially parallel to each other with a predetermined spacing between them, a direct-current power supply configured to maintain the first sheet-like electrode at a negative potential so that atoms attached to the inner surface of the sheet-like electrode undergo self-ionization and to apply a direct-current voltage between the first and second sheet-like electrodes so that a current flows between the first and second sheet-like electrodes, and a direct-current ammeter configured to measure a current flowing due to electrons emitted by the self-ionization of the dissociated atoms attached to the inner surface of the first sheet-like electrode.

Atomic flux measurement device

Provided is a semiconductor device containing a silicon single crystal substrate, a silicon carbide layerprovided on a surface of the substrate, a Group III nitride semiconductor junction layerprovided in contact with the silicon carbide layer, and a superlattice-structured layerconstituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlGaInNM(0&#x2266;X, Y, Z&#x2266;1, X+Y+Z=1, 0&#x2266;&#x3b1;&#x3c;1, M is a Group V element except nitrogen).

Semiconductor device having a group-III nitride superlattice layer on a silicon substrate

Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate

Growing community of inventors

Kyotanabe, Japan

Tadashi Ohachi