Kawasaki Steel Corporation

Kawasaki Microelectronics, Inc.

Tadashi Nakano

Tomohiro Ohta

Yumiko Kawano

Hiroshi Shinriki

Nobuyuki Takeyasu

Eiichi Kondoh

Takeshi Kaizuka

Tomoharu Katagiri

Hiroshi Yamamoto

Makoto Shimura

Nobuyoshi Sato

Kyoji Tokunaga

Hideaki Ono

An insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, an insulating film forming coating solution for forming the insulating film, and a method of manufacturing the insulating film are set forth. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR) &mdash;, methyltrialkoxysilane expressed by a general formula, SiCH (OR) &mdash;, and tetraalkoxysilane expressed by a general formula, Si(OR) is coated on a semiconductor substrate ( ) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film ( ) which is composed of a silane-derived compound expressed by a general formula, SiH (CH ) O , where, 0<x<1, 0<y<1, x&plus;y&lE;1 is formed.

Method of forming an insulating film having SI-C, SI-O and SI-H bonds to cover wiringlines of a semiconductor device

Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film

A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

Method for making metal interconnection

A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:

Coating solution and method for preparing the coating solution, method

A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

Metal interconnection and method for making

Method for making metal interconnection with chlorine plasma etch

In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber.

Method of manufacturing insulating film of semiconductor device and

A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.

Method of chemical mechanical polishing planarization of an insulating

An interconnection structure for semiconductor integrated circuits and the method for manufacturing of the same are provided. The interconnection structure has a low electric resistance and a good electromigration resistance and can prevent the atoms in wire materials from diffusing into insulating films or substrates. More particularly, an insulating film 12 is formed on a silicon substrate 10, on which a tungsten 14 is formed. The tungsten film 14 is subjected to plasma irradiation on the surface thereof to form an amorphous W--N film 16. A copper wire pattern 20 is formed on the amorphous W--N film 16.

Interconnection structure for semiconductor integrated circuit and

A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula:

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Chiba, Japan

Tadashi Nakano