Agency of Industrial Science and Technology Ministry of International

Agency of Industrial Science and Technology

National Institute of Advanced Industrial Science and Technology

Ntt Mobile Communications Network, Inc.

Tadashi Nakagawa

Yoshinobu Sugiyama

Taro Itatani

Kimihiro Ohta

Kazuhiko Matsumoto

Masami Ishii

Takeshi Kojima

Naoyuki Kawai

Hanpei Koike

Toshihiro Sekigawa

Mitsuo Kawashima

Tsunenori Sakamoto

In an insulated double gate FET, the threshold voltage during the operation of a transient response thereof is enabled to be arbitrarily and accurately controlled by a method that includes applying a first input signal intended to perform an ordinary logic operation to one of the gate electrodes thereof and applying, in response to this signal, a second signal that has a signal-level temporal-change direction as the first input signal and has at least one of the low level and the high level thereof shifted by a predetermined magnitude or endowed with a predetermined time difference or has the time slower or faster signal level change of the signal to the other gate electrode.

Method for application of gating signal in insulated double gate FET

A high-speed, high-sensitivity photo-receiving device has a light-absorbing substrate, on which a pair of electrodes are provided. An insulative optical guide is located over an exposed surface portion of the substrate constituting an optical window. The optical guide is permeable to incident light, and the width of the optical guide does not exceed the wavelength of the incident light.

Photo-receiving device with light guide

A method of fabricating a photo-device includes the steps of forming an optically nontransparent, electrically conductive layer on the surface of a photoelectric conversion substrate, and transferring a portion of the optically nontransparent, electrically conductive layer using a scanning probe process apparatus to form, over an optical window, a light-permeable protective insulation structure of a region of the optical window on the substrate surface beneath the light-permeable protective insulation structure.

Method of fabricating a photo-device

An apparatus of measuring an electric signal comprises a laser device, optical elements, an electrooptic crystal, a photoelectric converter, and an electric circuit. The electrooptic crystal is selected from the materials in the type of having properties of changing its refractive index in the direction of its optic major axes and the direction of these axes by a function of an applied electric field. In the apparatus, the electrooptic crystal is placed in the electric field applied by an electric circuit under measurement. A laser beam emitted from the laser device is incident on the electrooptic crystal. A reflected light passed through the crystal is resolved into rays in two polarized direction. Each ray is subjected to a photoelectric conversion by passing through the photoelectric converter and exerted as an electric output. A differential signal of the electric output is defined as a measurement signal. By selecting two polarized directions of the laser beam by a half-wave plate as the optical element, two signals corresponding to the changes in the refractive index and optic major axes of the crystal. Two component of a vector of the electric field can be obtained by a first order combination of these signals.

Method of electro-optical measurement for vector components of electric

Photo-receiving device, and method of fabricating a photo-device

A method for controlling the thickness of a thin crystal film which is grown in a vacuum atmosphere, comprising the steps of: generating an electron beam in the vacuum atmosphere; directing the electron beam thus generated to a crystal being grown to obtain a diffraction pattern of the crystal; detecting the variations in time of the intensity of the diffraction pattern thus obtained; obtaining the number of oscillations from the variations thus detected; and interrupting the growth of the crystal in synchronism with the oscillations of the intensity when the number reaches a predetermined number. The composition ratio of a mixed crystal can be also determined by the ratio among the frequency of oscillations of each crystal which constitutes the mixed crystal. The oscillations of the intensity of the RHEED pattern can be observed more than 400 times so that the thickness of the grown thin crystal film can be measured with the accuracy higher than 1000 .ANG. in terms of the mono-layer.

Method for controlling the thickness of a thin crystal film

A semiconductor device comprises a superlattice semiconductor portion having a plurality of pairs of superlattice semiconductor thin films for forming step differences of band edge energy. The pairs of the thin films are laminated such that parameters which determine the structure of the thin films are monotonically changed in the direction of the lamination of the thin films. Electrodes are disposed to apply an electric field across both ends of the superlattice semiconductor portion. The semiconductor device has a good negative resistance characteristic and a large design freedom of semiconductor device.

Growing community of inventors

Tsukuba, Japan

Tadashi Nakagawa