Sharp Kabushiki Kaisha Corporation

Tadashi Nagakawa

Kazuo Hashiguchi

A solid-state imaging device has a progressive-scan structure and includes, in a unit pixel area of a semiconductor substrate, a photoelectric conversion region and a vertical transfer CCD region for reading and transferring a signal charge stored in the photoelectric conversion region by performing four-phase driving using two vertical transfer electrodes each having a two-layer structure formed over the semiconductor substrate with a gate insulation layer disposed therebetween. Among the two vertical transfer electrodes each having a two-layer structure, lead parts of one vertical transfer electrode having the two-layer structure are positioned on the photoelectric conversion region in the unit area.

Solid-state imaging device having partially covered conversion region, and method for producing and method for driving the same

A charge transfer device includes: a transfer channel for transferring a charge in a charge transfer direction; a charge detecting section having a diffusion layer for storing the charge transferred through the transfer channel and for inducing a voltage corresponding to the amount of the stored charge; and a transistor for detecting the induced voltage, the transistor having: a gate electrode formed on the diffusion layer, the gate electrode being in direct contact with the diffusion layer; a gate insulating film formed on the gate electrode; and a channel region formed above the gate electrode.

Charge transferring device having an FDA type charge detecting section

A charge transfer device has a transfer section for transferring a signal charge along a transfer channel, and a pickup section connected to the transfer section for converting the signal charge received from the transfer section to a voltage signal, both sections being formed on a substrate. The transfer channel is bent generally at a right angle between the transfer section and the pickup section.

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Nabari, Japan

Tadashi Nagakawa