Sumitomo Metal Industries, Inc.

Tadashi Miyamura

Yoshihiko Sunami

Hiroshi Mabuchi

Kyoichi Komachi

Tohru Iwahashi

Shigeo Sugawara

Takahiro Yoshiki

A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.

Plasma processing apparatus

A plasma apparatus which is; provided with a pair of plasma generation chambers at both sides of a specimen chamber provided therein with two specimen mounts for fixing specimens to be subjected to the predetermined processing such as plasma CVD; designed to use the specimen chamber in common so as to simultaneously process by plasma generated by the pair of plasma generation chambers the specimens fixed to the two specimen mounts to thereby be compact as a whole; and provided with a load lock chamber communicated with the specimen chamber and delivering the specimens between the load lock chamber and specimen chamber, so that the plurality of specimens are contained in cassettes disposed in the load lock chamber and the contained specimens are moved between the load lock chamber and the specimen chamber by means of a loader provided in the load lock chamber, thereby enabling a rest time to be reduced and the specimen to be efficiently processed.

Plasma apparatus

A method for the manufacture of high-strength, high-density carbon materials is disclosed. The method comprises the steps of pulverizing a carbonaceous raw material having a carbon content of at least 92% by weight, a volatile content of 7-20% by weight up to 900.degree. C., and linear shrinkage as a molded body of at most 6% during heating up to 500.degree. C. to an average particle diameter of greater than 10 .mu.m and at most 40 .mu.m, followed by molding and baking. An organic fiber after baking in an inert atmosphere at a temperature of at least 400.degree. C. may be mixed with the pulverized carbonaceous raw material.

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Osaka, Japan

Tadashi Miyamura