Tokyo Electron Limited

Tadashi Mitsunari

Tsuyoshi Moriya

Munehito Kagaya

Yusuke Suzuki

Shinya Iwashita

Satoshi Tanaka

Satoru Kawakami

Toshiya Matsuda

Atsushi Kubo

Naotaka Noro

Masaaki Miyagawa

Kazuyoshi Matsuzaki

Ayuta Suzuki

Kenya Iwasaki

Kosuke Yamamoto

Hiroyuki Onoda

In a plasma processing apparatus, a processing chamber is provided. First electrodes are disposed inside the processing chamber and supplied with radio frequency powers. The second electrode is disposed inside the processing chamber and functions as a counter electrode for the first electrodes. The power supply source supplies radio frequency powers to the first electrodes to generate plasma between the first electrodes and the second electrode and process a target object using the plasma. The allocation setting unit is disposed between the power supply source and at least one of the first electrodes to set power allocations of the radio frequency powers to be supplied to the first electrodes. Further, the allocation setting unit has series circuits in each of which an impedance circuit and a switching element are connected in series. The series circuits are connected in parallel. The control device controls the switching elements in the series circuits.

Plasma processing apparatus and plasma processing method

The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and etching the silicon-containing film, wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer and the silicon-containing film by generating a He-containing plasma.

Substrate processing method and substrate processing device

The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.

Etching method

When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

Film forming apparatus and film forming method

A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

Temperature measurement substrate and temperature measurement system

A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

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Yamanashi, Japan

Tadashi Mitsunari