Semitec Corporation

Hirosaki University

National Institute of Technology

Ishizuka Electronics Corporation

Tadashi Matsudate

Manabu Orito

Yutaro Tabata

Takeshi Fuse

Masaya Higashi

Haruyuki Endo

Shuji Inamura

Yasutaka Tanaka

Takahiro Okabe

Yuya Iseki

Takuma Kogawa

Yasushi Hosokawa

Toshinori Nakajima

Takashi Nonaka

Shigenao Maruyama

A temperature measurement device () comprises: a thermosensitive unit () that senses temperature; a thin film thermosensitive element () for measurement capable of measuring the temperature by bringing the thermosensitive unit () into contact with a subject; a thin film thermosensitive element () for protective heating disposed to enable heat exchange with the thin film thermosensitive element () via an insulating layer (S), and controlled so that the temperature thereof is equal to the temperature of the thin film thermosensitive element (); a temperature control element () capable of causing the thin film thermosensitive element () to be in a temperature state in which the temperature thereof is a certain degree lower than the temperature of the subject; and a control processing unit () controlling the thin film thermosensitive element (), the thin film thermosensitive element (), and the temperature control element ().

Temperature measurement device, temperature measurement method, and temperature attenuation measurement method

Provided is a pressure sensor that is compact, ensures insulation, and is highly reliable. A pressure sensor () comprises: a sensor body (); a pressure sensor element () provided on one surface side of the sensor body (); a through hole () which is formed from the one surface side of the sensor body () toward another surface side of the sensor body, and through which a lead wire () electrically connected to the pressure sensor element () is passed; and an insulation layer () formed in the inner wall of the through hole (). Passed through the through hole () is a conducting body core part (), which is a part of the lead wire () from which an insulation coating has been removed.

Pressure sensor

Provided are: a contact force sensor which has high accuracy and sensitivity and is capable of ensuring strength; and a device provided with the contact force sensor. The present invention comprises: a sensor body () manufactured by processing a semiconductor material, wherein the sensor body () is provided with: a ring-shaped portion (); a central portion () formed substantially in the center of the ring-shaped portion (); a spoke portion () connected to the ring-shaped portion () from the central portion () toward the outside; and stress-electricity conversion elements () which are disposed at positions facing each other on the front side and the back side of the spoke portion (), and convert the displacement of the spoke portion () into an electric signal.

Contact force sensor and device provided with contact force sensor

Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided.

Contact force sensor

An improved thermopile infrared sensor is provided wherein thermoelectric elements are formed on a single crystalline silicon substrate containing a cavity therein. The thermopile infrared sensor contains a first dielectric film covering the cavity, a plurality of n-type polycrystalline silicon layers formed on the first dielectric film, extending radially from the vicinity of a chip center, and metal film layers formed in contact with the n-type polycrystalline silicon layers, wherein hot junctions are formed at the chip central side and cold junctions are formed at the chip peripheral side of the n-type polycrystalline silicon layers, respectively, by contacting the n-type polycrystalline silicon layer and the metal film layer, and at least one series of thermoelectric elements is formed on the first dielectric film by connecting alternately and successively, by the metal film layer, the hot junction and cold junction of the neighboring n-type polycrystalline silicon layer.

Thermopile infrared sensor and process for producing the same

Growing community of inventors

Tokyo, Japan

Tadashi Matsudate