Micron Technology Incorporated

Elpida Memory, Inc.

Tadashi Koyanagi

Youkou Ito

A method of manufacturing a semiconductor device according to one embodiment includes: preparing a semiconductor water which is partitioned into a plurality of first semiconductor chips, the plurality of first semiconductor chips including a first group of first semiconductor chips and a second group of first semiconductor chips; providing a second semiconductor chip over at least one of first semiconductor chips of the first group; providing a sealer on the first semiconductor chips of the second group; and grinding one face of the semiconductor wafer which is on the opposite side from a face on which the second semiconductor chip and the sealer are provided.

Method of manufacturing semiconductor device including grinding semiconductor wafer

A semiconductor device manufacturing method is provided. First and second semiconductor chips are prepared, including first and second electrodes on first and second surfaces respectively. The second semiconductor chip includes a third electrode on a third surface opposite to the second surface. The third electrode overlaps the second electrode. The second surface includes an electrode-free region that is free of any electrode. A sealing resin is applied on the first surface of the first semiconductor chip. A second surface of the first semiconductor chip is held by a bonding tool including a pressing surface and a supporting-portion projected from the pressing surface. The pressing surface is made into contact with the second electrode. The supporting-portion is arranged at a position facing the electrode-free region. The second semiconductor chip is stacked over the first semiconductor chip by the bonding tool to electrically connect the third electrode to the first electrode.

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Tokyo, Japan

Tadashi Koyanagi