Sharp Kabushiki Kaisha Corporation

Tadashi Kobashi

Noboru Iwata

Kenichi Yoshimura

Masashi Kago

Makoto Izumi

Masaki Yamamoto

Yoshihiro Ueta

Tatsuya Ryohwa

A light-emitting element includes, in sequence, an anode, a hole transport layer, a luminous layer containing a plurality of quantum dots, an electron transport layer, and a cathode. The electron transport layer includes a plurality of inorganic nanoparticles having electron transportability, and an organic layer having electron transportability. The organic layer partly contains the plurality of inorganic nanoparticles, and includes a plurality of first hollows in an interface adjacent to the luminous layer. The plurality of first hollows are filled with the plurality of quantum dots.

Light-emitting element, light-emitting device, and manufacturing method of light-emitting element for improving electron transport efficiency

An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Electroluminescent element and display device

A light-emitting device includes: an anode electrode; a cathode electrode; a plurality of light-emitting layers sandwiched between the anode electrode and the cathode electrode; and a light absorption layer disposed between the plurality of light-emitting layers and a light extraction surface, wherein the plurality of light-emitting layers include InP based quantum dots and are configured to emit at least green color of light and red color of light, and the light absorption layer selectively absorbs light at 570 to 610 nm.

Light-emitting device, light wavelength conversion device, and display device

The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Growing community of inventors

Sakai, Japan

Tadashi Kobashi