Novel Crystal Technology, Inc.

Tadashi Kase

Kazuo Aoki

Yuki Uchida

Shigenobu Yamakoshi

A field-effect transistor includes a GaO-based semiconductor layer, a source region and a drain region that are formed inside the GaO-based semiconductor layer, a gate electrode that is formed, via a gate insulating film, on a channel region as the GaO-based semiconductor layer between the source region and the drain region, a source electrode connected to the source region, and a drain electrode connected to the drain region. An interface charge including a negative charge is formed between the gate electrode and the channel region, and a gate threshold voltage is not less than 4.5V.

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Saitama, Japan

Tadashi Kase