Renesas Electronics Corporation

Renesas Technology Corp.

Tadashi Kameyama

Masanori Ikeda

Takayasu Ito

Takanobu Naruse

Masashi Horiguchi

Koji Sato

Mitsuru Hiraki

Masataka Minami

Seiichi Saito

Kenichi Shimada

Hirotaka Hara

Yukitoshi Tsuboi

Yohei Akita

Takafumi Betsui

Yoshikazu Tanaka

A semiconductor device includes a semiconductor package having a differential signal terminal pair, and a wiring board. The wiring board includes a first and a second signal transmission line and a reference potential plane. The first and the second signal transmission line is formed in a first conductive layer and connected to the differential signal terminal pair. The reference potential plane includes a conductive pattern formed in a different conductive layer from the first conductive layer. The conductive pattern includes a first and a second region overlapped with the first and the second signal transmission line in plan view, respectively. The conductive pattern has a plurality of openings in the first and the second region. An area of a first conductive portion of the reference potential plane in the first region becomes equal to an area of a second conductive portion of the reference potential plane in the second region.

Semiconductor device on wiring board having reference potential planes with openings

The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abnormal power supply voltage detection device and method for detecting abnormal power supply voltage

According to one embodiment, a semiconductor deviceincludes a temperature sensor modulethat outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unitthat stores the temperature, the digital value, and the sensor voltage value, and a controllerthat calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit, in which the temperature, the digital value, and the sensor voltage value stored in the storage unitinclude absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Semiconductor device, temperature sensor and power supply voltage monitor

A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.

Semiconductor device and test method of semiconductor device

According to one embodiment, a semiconductor deviceincludes a temperature sensor modulethat outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unitthat stores the temperature, the digital value, and the sensor voltage value, and a controllerthat calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage, in which the temperature, the digital value, and the sensor voltage value stored in the storage unitinclude absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Monitor circuit, semiconductor integrated circuit, semiconductor device, and method of controlling power supply voltage of semiconductor device

A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range. It is possible to expand the chip temperature detection range by changing the correspondence between the chip temperature detection signal and the chip temperature, without increasing the number of voltage comparators.

Semiconductor device and temperature sensor system

The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.

Semiconductor integrated circuit and operation method for the same

A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.

Growing community of inventors

Tokyo, Japan

Tadashi Kameyama