Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Other

Skhynix Inc.

Asahi Kasei Kogyo Kabushiki Kaisha

Tohoku University

National Institute of Advanced Industrial Science and Technology

Asahi Kasei Kabushiki Kaisha

Tadashi Kai

Toshihiko Nagase

Hiroaki Yoda

Masahiko Nakayama

Eiji Kitagawa

Tatsuya Kishi

Tadaomi Daibou

Katsuya Nishiyama

Koji Ueda

Daisuke Watanabe

Masatoshi Yoshikawa

Sumio Ikegawa

Junichi Akiyama

Junichi Ito

Yoshiaki Fukuzumi

Yutaka Hashimoto

Makoto Nagamine

Akira Kikitsu

Shinji Yuasa

Masaru Toko

Hisanori Aikawa

Koji Ando

Akio Fukushima

Hitoshi Kubota

Taro Nagahama

Hitoshi Iwasaki

Masayuki Takagishi

Tomoyuki Maeda

Kay Yakushiji

Shuichi Murakami

Kenichiro Yamada

Minoru Amano

Tomomi Funayama

Mariko Shimizu

Masahiro Takashita

Akiyuki Murayama

Taichi Igarashi

Yoshihisa Iwata

Naoharu Shimomura

Yasushi Nakasaki

Youngmin Eeh

Kenji Noma

Takamitsu Ishihara

Jyunichi Ozeki

Shigemi Mizukami

Takeshi Iwasaki

Terunobu Miyazaki

Kazumasa Sunouchi

Masaki Endo

Tomomasa Ueda

Kazuya Sawada

Kuniaki Sugiura

Choon Kun Ryu

Shumpei Omine

Hyung Suk Lee

Jae Geun Oh

Gaku Sudo

Takahide Kubota

Shogo Itai

Masaru Tokou

Yoshiaki Saito

Shigeki Takahashi

Daisuke Ikeno

Yasuyuki Sonoda

Masayoshi Iwayama

Sung-Joon Yoon

Hiroki Kawai

Keum Bum Lee

Kunihiro Imada

Kenji Inokuchi

Kei Yakushiji

Masaaki Sakurai

Yuji Matsue

Sook Joo Kim

Masashi Sahashi

Koji Yamakawa

Katsutaro Ichihara

Katsuaki Natori

Masahiro Koike

Toshiyuki Enda

Megumi Yakabe

Shigeto Fukatsu

Satoshi Yanagi

Yasuo Ando

Min Suk Lee

Mikihiko Oogane

Muneaki Kimura

Kunihiko Yamashita

Rina Nomoto

Hideaki Obana

Daisuki Watanbe

Takayuki Tsukagoshi

Wu Feng

Masatoshi Yoshkawa

A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

Magnetic memory device

According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mn), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

Magnetic memory device with nonmagnetic layer having two additive elements

A nonvolatile storage device includes first interconnections extending in a first direction and second interconnections extending in a second direction intersecting the first direction. Memory cells are formed at intersections between first and second interconnections. Each memory cell includes a resistance change element and a selector. In the arrangement of memory cells, all memory cells that are connected to any particular first interconnection are aligned along that first interconnection, and all memory cells connected to any particular second interconnection are alternately staggered in the first direction across a width of that second interconnection.

Nonvolatile storage device

A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.

Magnetoresistive memory device

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).

According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.

Memory device

A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.

Stack and magnetic device

According to one embodiment, a magnetic device includes a stacked body including a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer. The stacked body has a quadrangular planar shape, the stacked body has a first side dimension in a first direction parallel to a surface of a substrate and a thickness in a second direction perpendicular to the surface of the substrate, and a ratio of the first side dimension to the thickness is in a range of 0.10 to 4.0.

Magnetic device and memory device

According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.

Magnetic storage device

According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.

According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.

According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.

Magnetic memory device and manufacturing method of the same

Growing community of inventors

Tokyo, Japan

Tadashi Kai