Kabushiki Kaisha Toyota Chuo Kenkyusho

Denso Corporation

Toyoda Gosei Co., Ltd.

Tadashi Ito

Tsuyoshi Nomura

Masami Naito

Toshiyasu Ito

Takeshi Miyazaki

Hiroyuki Kondo

Tomoyoshi Motohiro

Yukihisa Ueno

Daisuke Nakamura

Atsuto Okamoto

Masahiro Hanazawa

An antenna device is provided with a first connecting electrode, a first tunnel diode, a first antenna member and a fixed electrode. The first connecting electrode is configured to be connected to a fixed potential via a load. The first tunnel diode has a pair of electrodes. One of the electrodes of the first tunnel diode is connected to the first connecting electrode, and the other electrode of the first tunnel diode is connected to the first antenna member. The first antenna member has a conductive property and includes a first portion and a second portion. The first portion of the first antenna member is connected to the other electrode of the first tunnel diode. The fixed electrode is connected to the second portion of the first antenna member. The fixed electrode is configured to be connected to the fixed potential.

Antenna devices

A refined SiC single crystal that includes a small number of defects is provided as follows. At a first growth step, a first seed crystal is formed from a crude SiC single crystal, and a first grown crystal is formed on a first growth surface, which is a plane having an inclination of 20 degrees or smaller from a {1-100} plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate growth step, an n growth crystal is formed on an n growth surface, which is a plane having an inclination of 45 to 90 degrees from an (n&#x2212;1) growth surface and an inclination of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single crystal is formed on a final growth surface, which has an inclination of 20 degrees or smaller from a {0001} plane.

SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device

Growing community of inventors

Miyoshi, Japan

Tadashi Ito