Fuji Photo Film Company, Limited

Fujifilm Corporation

Other

Kabushiki Kaisha Toyota Chuo Kenkyusho

Fujifilm Electronic Materials U.s.a., Inc.

Tadashi Inaba

Hisashi Okada

Atsushi Mizutani

Tadanobu Sato

Hiroyuki Seki

Takahiro Matsuno

Tetsuya Kamimura

Kohzaburoh Yamada

Kazutaka Takahashi

Shinichi Ichikawa

Kiyoshi Morimoto

Morio Yagihara

Tomonori Takahashi

Atsushi Matsunaga

Ryo Suzuki

Shigeo Hirano

Hiroyuki Mifune

William A Wojtczak

Katsuyuki Watanabe

Tomoyuki Ohzeki

Hideaki Takahashi

Masaru Yoshikawa

Yoichi Hosoya

Naotsugu Muro

Masaru Takasaki

Bing Du

Jiro Sakata

Keiichi Saji

Tadashi Nakamura

Takamitsu Tomiga

Tomoo Kato

Yumi Masuoka

Takeshi Takahashi

Hiroyuki Suzuki

Akira Abe

Masato Satomura

Makoto Kikuchi

Hiroshi Kawamoto

Tsukasa Yamada

Masahiro Asami

Naoto Ohshima

Masanobu Takashima

Hiroshi Takeuchi

Yoshihisa Tsukada

Hirotomo Sasaki

Hiroshi Kitaguchi

Shigeharu Urabe

Junichiro Hosokawa

Hiroshi Inada

Mamoru Sakurazawa

Tamio Mizukami

Toshitaka Saito

Takashi Hoshimiya

Satomi Takahashi

Tatsuya Tamaoki

Akio Tanaka

Naoharu Kiyoto

Haruyoshi Kondo

Yoshiyuki Yonetani

Naoki Asanuma

Hideaki Nomura

Katsuhiro Yamashita

Ryoji Nishimura

Shun-ichi Ikeda

Takeshi Suzumoto

Yoshinori Nishiwaki

Hideo Fushimi

Masafumi Mizuno

Takahiro Watanabe

Toshiyuki Saie

Katsuyuki Nukui

Seongmu Bak

Toru Yamada

Tomonori Owaki

Toshihiko Maekawa

Tomohiko Akatsuka

Masashi Enokido

Yuko Kanda

Yasuhiro Katsuoka

Sumi Takamiya

Kee Young Park

Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Removal liquid and method for removing oxide of group III-V element, treatment liquid for treating compound of group III-V element, oxidation prevention liquid for preventing oxidation of group III-V element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product

Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

Method for treating pattern structure, method for manufacturing electronic device, and treatment liquid for inhibiting collapse of pattern structure

An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Etching method, and method of producing semiconductor substrate product and semiconductor device using the same

An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Etching method of semiconductor substrate, and method of producing semiconductor device

An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

Polishing liquid for metal and polishing method using the same

A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80&#xb0; C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

Method of producing semiconductor substrate product, and etching method to be used therein

This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.

Etching composition

This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.

Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.

Cleaning composition, method for producing semiconductor device, and cleaning method

A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes, an oxidizing agent; and an organic acid; and a compound represented by the following general formula (1): 

Metal polishing slurry and chemical mechanical polishing method

The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), Rrepresents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), Rrepresents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. 

Metal polishing composition and chemical mechanical polishing method

A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), Rrepresents an alkyl group having 1 to 4 carbon atoms and Rrepresents an alkylene group having 1 to 4 carbon atoms.

Metal-polishing liquid and polishing method

The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14.

Cleaning liquid for semiconductor device and cleaning method

The present invention relates to a silver halide color photographic light-sensitive material wherein at least one of light-sensitive silver halide emulsion layers includes a silver halide emulsion having a silver chloride content of at least 95 mol % and a silver iodide content of 0.05 mol % to 0.75 mol % and/or a silver bromide content of 0.05 mol % to 4.00 mol % and further at least one compound represented by the following formula (I):X-(L)-Y&#x2003;&#x2003;Formula (I) wherein X represents a group adsorptive to a silver halide, L represents a divalent connecting group comprising one of an atom and an atomic group including at least one of a carbon atom, a nitrogen atom, a sulfur atom and an oxygen atom, Y denotes a reducible group and n denotes an integer of 0 or 1.

Silver halide color photographic light-sensitive material and image formation method using the same, silver halide emulsion, reducing compound having group adsorptive to silver halide and method for producing the same

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Kanagawa, Japan

Tadashi Inaba