Tokyo Electron Limited

Tokyo Electron Limi Ted

Tadashi Iino

Takayuki Toshima

Naoki Shindo

Takehiko Orii

Mitsunori Nakamori

Yuji Kamikawa

Norihiro Ito

Kinya Ueno

Yusuke Saito

Yoshihiro Kai

Yoichi Tokunaga

Noritaka Uchida

Miyako Yamasaka

Hideyuki Tsutsumi

Jiro Higashijima

Nobuhiro Ogata

Hiroki Ohno

Kenji Sekiguchi

Yusuke Hashimoto

Keigo Satake

Yosuke Hachiya

Yoshiteru Fukuda

Yasuhiro Chouno

Toru Ihara

Yoshichika Tokuno

A substrate processing apparatus includes: a substrate holder that holds and processes a substrate; a nozzle that ejects a processing liquid to the substrate held by the substrate holder; a conductive pipe connected to the nozzle and configured to supply the processing liquid to the nozzle; a processing liquid supply that supplies the processing liquid to the nozzle via the conductive pipe; a ground line that connects the conductive pipe and a reference potential; a liquid receiver provided around the substrate holder and configured to receive the processing liquid ejected from the nozzle; an electrode provided close to the liquid receiver; a voltage source configured to apply a voltage to the electrode and impart a potential difference between a liquid contact surface of the liquid receiver and the reference potential; and an ammeter configured to measure a current value of a current flowing through a charge moving path.

Substrate processing apparatus and method for determining deterioration degree of conductive pipe

A substrate processing apparatus includes an air supply configured to supply air into a place where a substrate is located; and a rectifying member, having multiple through holes, configured to rectify the air supplied from the air supply. The rectifying member includes a base; and a charge diffusion layer formed on a surface of the base. Electric charges attached to a surface of the rectifying member are diffused along the charge diffusion layer.

Substrate processing apparatus

A substrate processing apparatus includes: a substrate holder; a nozzle that ejects a processing liquid to the substrate; a conductive pipe that supplies the processing liquid to the nozzle; a ground line that connects the conductive pipe to a reference potential; a liquid receiver provided around the substrate holder and receives liquid ejected from the nozzle; and a deterioration degree measuring unit that measures a deterioration degree of conductivity of the conductive pipe. The deterioration degree measuring unit includes: a measurement liquid supply that supplies a measurement liquid to the conductive pipe; a potential difference imparting unit that imparts a potential difference between a liquid contact surface of the liquid receiver and the reference potential; and an ammeter that measures a current value of a current flowing through a charge moving path established via the measurement liquid between the liquid contact surface of the liquid receiver and the ground line.

A substrate processing apparatus includes: a processing unit including a holder that holds a substrate and rotates the substrate, a nozzle that ejects a processing liquid, and a conductive piping unit that supplies the processing liquid to the nozzle; a controller that causes the processing unit to execute a liquid processing in which the substrate is processed by supplying the processing liquid from the nozzle to the substrate that is held and rotated by the holder, and a measuring unit that measures a flowing current generated by the processing liquid flowing through the piping unit. The controller monitors the liquid processing based on a measurement result by the measuring unit.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus comprises a holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto the substrate held by the holder; and a resistance value varying mechanism configured to vary an electrical resistance of the holder in contact with the substrate.

Substrate processing apparatus with resistance value varying mechanism

A substrate processing apparatus includes a holding device that includes a conductive member and holds a substrate, a conduction path structure that includes a conductive material and positioned such that the conduction path structure is in contact with the holding device, a supply device that supplies a processing liquid to the substrate held by the holding device, and a grounding structure including a variable resistance device that changes a resistance such that the grounding structure has a first end portion connected the conduction path structure and a second end portion connected to a ground potential.

This substrate processing apparatus supplies wafers W accommodated in a closed processing containerwith ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generatorfor supplying the ozone gas into the processing container, a steam generatorfor supplying the steam into the processing containerand a steam nozzlearranged in the processing containerand connected to the steam generator. The steam nozzleis equipped with a nozzle bodyhaving a plurality of steam ejecting orificesformed at appropriate intervals and a heaterfor preventing dewdrops of the steam from being produced in the nozzle body. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.

Water vapor is mixed to Ogas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the Ogas dissolve into condensed water. Subsequently, a gas-liquid separator separates the Ogas from the condensed water. Water vapor is mixed with the Ogas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

Ozone processing apparatus and ozone processing method

A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

Substrate processing method, substrate processing apparatus and computer-readable memory medium

A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented, and processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.

Computer readable storage medium for controlling substrate processing apparatus

A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.

Resist film removing method

Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.

Substrate processing method

Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Substrate processing apparatus for resist film removal

A common solvent vapor supply sourceand a common processing gas supply sourcesupply ozone gas and steam to a plurality of processing vesselsA,B. Pressures in the processing vessels are regulated by adjusting the openings of the valuable throttle valvesA,B, which are placed in exhaust linesA,B, respectively.

After semiconductor wafers W have been processed with ozone gas and steam fed into a processing vessel, air is fed into the processing vesselfrom an air supply source connected to an ozone gas supply pipefor feeding ozone gas into the processing vessel, whereby an atmosphere of the ozone gas in the processing vesselis replaced with an atmosphere of the air.

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Nirasaki, Japan

Tadashi Iino