Oki Semiconductor Co., Ltd.

Oki Electric Industry Co., Ltd.

Tadashi Chiba

Noriyuki Miura

Koichi Morikawa

There is provided a visible-region light measuring instrument including: a first photodiode and a second photodiode. At least one of the first photodiode and the second photodiode comprises plural photodiodes, when the first photodiode comprises a first plural photodiodes, the visible-region light measuring instrument has first fuses that control connections between the first plural photodiodes and at least one of the first node and the first power supply node. When the second photodiode comprises a second plural photodiodes, the visible-region light measuring instrument has second fuses that control connections between the second plural photodiodes and at least one of the first node and the second power supply node.

Visible-region light measuring instrument and visible-region light measuring instrument manufacturing method

A light quantity measuring device includes a first light reception element, a second light, reception element, an identification circuit, and a selection circuit. The first light reception element receives a predetermined incident light at a first light reception surface. The second light reception element receives the incident light at a second light reception surface, which is oriented in the same direction as the first light reception surface. The identification circuit identifies an incident angle of the incident light with respect to the first light reception surface. The selection circuit, when the incident angle differs from a desired incident angle, selectively electrically connects an output portion of the second light reception element to an output portion of the first light reception element.

Light quantity measuring device and method for measuring light quantity that selectively connects light reception elements based on incident light angle

A light amount measuring apparatus including a light amount measuring circuit and a power supply for supplying power to the light amount measuring circuit; wherein the light amount measuring circuit includes a light receiving device for receiving light and outputting an electric signal corresponding to light amount of the received light; a first switch for switching between electrical connection and disconnection between the light receiving device and the power supply; and a drive controller for controlling the first switch so that the first switch electrically connects the light receiving device to the power supply when the light receiving device is set to an activated state and electrically disconnects the light receiving device from the power supply when the light receiving device is set to a deactivated state.

Light amount measuring apparatus

The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.

Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus

Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident parthaving a light receiving elementand a signal processing circuitthat processes an output signal from the light receiving element, which are formed on a SOI substrate, a plurality of contact plugselectrically connected to the light blocking layerare laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuitas the light blocking layer. The plurality of contact plugshave a ground or a potential sufficient to draw out stray charges occurring in the light blocking layer.

Semiconductor device, optical measuring and detecting device, and method of manufacturing the same

An SOI semiconductor device has a substrate, an insulation film, a silicon film, a gate insulation film, a gate electrode, a pair of first diffusion regions, a first region, and a second diffusion region. The insulation film is formed on the substrate. The silicon film is formed on the insulation film. The gate insulation film is formed on the silicon film. The gate electrode is formed on the gate insulation film. The pair of first diffusion regions is formed in the silicon film while sandwiches the under part of the gate electrode in between. The first region is sandwiched by a pair of the first diffusion regions. The second diffusion region contacts with the first region while adjoins one of the first regions and has the same conductivity type with the first region.

SOI semiconductor device and method of manufacturing thereof

The invention provides an amplifying circuit for reducing electric power consumption at a standby mode time. Therefore, in DMOS and NMOS transistors constituting a cascode amplifier, the gate of the DMOS transistor of an initial stage is biased to a grounding voltage through a resistor, and the source of the DMOS transistor is connected to the output side of an inverter through an inductor. When a control signal is set to a level 'H', the output of the inverter becomes a level 'L', and the DMOS transistor attains a turning-on state and a sufficient operating electric current is flowed to the cascode amplifier. Thus, an input signal is amplified and is outputted as an output signal. In contrast to this, when the control signal is set to the level &#x201c;L&#x201d;, the output of the inverter becomes the level &#x201c;H&#x201d;, and the DMOS transistor attains a turning-off state and the operating electric current of the cascode amplifier is stopped.

Amplifying circuit

A semiconductor element comprises a capacitance variable section and an inductor section. In the capacitance variable section, a variable capacitance diode equipped with first and second control electrodes is provided on an insulative substrate. The inductor section is formed on the capacitance variable section formed with the variable capacitance diode. The inductor section is formed in an insulating layer provided on the variable capacitance diode. A first input/output electrode, a second input/output electrode, and first and second control input/output electrodes are provided in exposed form on the upper side of the insulating layer provided on the capacitance variable section. Further, a turbinated spiral electrode that electrically connects the first input/output electrode and the second input/output electrode, a first control lead-out electrode that electrically connects between the first control electrode and the first control input/output electrode, and a second control lead-out electrode that electrically connects between the second control electrode and each second control input/output electrode, are provided within the insulating layer.

Semiconductor element, manufacturing method thereof, and high frequency integrated circuit using the semiconductor element

The capacity measuring device comprises a transistor () formed on a silicon substrate and having a drain, source, and gate regions (, and), extension metals () to be connected to the regions, a guard electrode () surrounding the extension metal () for the gate region, measurement pads () electrically connected to the extension metals, the guard rings () surrounding the measurement pads and connected to the guard electrode (). Accordingly, the infinitesimal capacity between any regions of the transistor in full scale is accurately measured by connecting the guard electrode () to a guard terminal of an infinitesimal capacity measuring apparatus for canceling the parasitic capacity.

Capacity measuring device and capacity measuring method

A semiconductor integrated circuit device which has a low power consumption in a static state. A first NMOS transistor includes a gate connected to an input, a source connected to ground, and a drain connected to an output. A second NMOS transistor includes a gate connected to the power supply, and a drain and source, one connected to the input terminal and the other to the first NMOS transistor's body. A first PMOS transistor includes a gate connected to the input, a source connected to a power supply, and a drain connected to the output. A second PMOS transistor includes a gate connected to ground, and a drain and source, one connected to the input terminal and the other to the first PMOS transistor's body. Also, the second NMOS transistor's body is connected to ground, or the second PMOS transistor's body is connected to V , or both.

Semiconductor integrated circuit device

A semiconductor driver circuit includes a first inverter circuit that inverts an input voltage and supplies a first inverted voltage, and a second inverter circuit that inverts the first inverted voltage and outputs a second inverted voltage. The second inverter circuit includes a first conduction type transistor, such as a PMOS transistor, and a second conduction type transistor, different from the first conduction type transistor, such as an NMOS transistor. The driver circuit further includes a substrate voltage supply circuit that supplies voltages to the substrate of the first conduction type transistor and the substrate of the second conduction type transistor, respectively, according to the second inverted voltage, and a substrate voltage control circuit that adjusts the substrate voltages applied to either or both of the first and second conduction type transistors, according to the second inverted voltage, in order to lessen the power consumption of the driver circuit.

Growing community of inventors

Tokyo, Japan

Tadashi Chiba