Tokyo Tungsten Co., Ltd.

A.l.m.t. Corporation

Sumitomo Electric Industries, Limited

Tadashi Arikawa

Norio Hirayama

Mitsuo Osada

Akira Ichida

Hidetoshi Maesato

Yoshinari Amano

Kiyoshi Asai

Kenji Sakimae

Akihisa Hosoe

Kengo Goto

Masayuki Itoh

Nobuyuki Saitoh

Tadashi Igarashi

Shohei Murakami

Mitsuru Tsuchiya

Masatoshi Nagashima

Hiroaki Oki

Hidefumi Hayashi

Hiroya Sato

Shouichi Inaba

Hiroshi Murai

Provided is a plating film containing Au and Tl, including Tl oxides including TlO on a surface of the plating film, a ratio of Tl atoms constituting TlO to a total of Tl atoms constituting the Tl oxides and Tl atoms constituting Tl simple substances on the surface being 40% or more.

Plating film and plated member

[Problem] To provide a heat spreader capable of removing heat from an element more efficiently and immediately than an existing one, and also capable of satisfactorily responding to further enhancement in performance and output of various apparatuses, and a method for efficiently manufacturing the same. [Solution] A heat spreader includes a Cu&#x2014;Mo layer made of a Cu&#x2014;Mo composite material and having an average thickness of less than or equal to 0.6 mm and a variation in thickness of less than or equal to 0.1 mm, and a Cu layer directly stacked on each of both surfaces thereof. A method for manufacturing the heat spreader includes planarizing a plate material of the Cu&#x2014;Mo composite material constituting the Cu&#x2014;Mo layer, and roll-bonding a Cu plate constituting the Cu layer to each of both surfaces thereof.

Heat spreader and method for manufacturing the same

A composite material is a Mo&#x2014;Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo&#x2014;Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.

Composite material, method for producing same and member using same

A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3&#xd7;10/K at 30&#x2013;800&#xb0; C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate () of a ceramic package ().

Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions

A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu&#x2014;Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu&#x2014;Mo composite, and rolling the Cu&#x2014;Mo composite into a sheet substrate. In the isostatic molding process, at least two or more platesandare disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those platesandwith covering the Mo powder compact with a flexible cover, such as a rubber mediumor the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

Semiconductor package and method for producing heat-radiating substrate for it

A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu&mdash;Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu&mdash;Mo composite, and rolling the Cu&mdash;Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates. and are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates and with covering the Mo powder compact with a flexible cover, such as a rubber medium or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

A heat sink substrate comprises a Cu&mdash;Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu&mdash;Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same

In a plastic-packaged semiconductor device molded by a synthetic resin, a heat sink is formed by a sheet which has a thermal expansion coefficient between 9.0.times.10.sup.-6 /K and 23.times.10.sup.-6 /K and a thermal conductivity greater than 200 W/m.multidot.K, which are selected in relation to those of the synthetic resin. The sheet is manufactured by mixing a first metal of a high melting point with a second metal of a low melting point lower than the first metal and by pressing and sintering the mixture. The first and the second metal may be molybdenum and copper, respectively. Alternatively, the sheet may be a composite sheet composed of a molybdenum mesh interposed between a pair of aluminum layers or a stacked sheet composed of a sintered layer of a mixture of molybdenum and copper and a coated layer of either molybdenum or copper.

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Toyama, Japan

Tadashi Arikawa