Samsung Electronics Co., Ltd.

University Public Corporation Osaka

Tadao Yagi

Kwang Hee Lee

Dong-Seok Leem

Gae Hwang Lee

Yong Wan Jin

Sung Young Yun

Xavier Bulliard

Rie Sakurai

Kyung Bae Park

Seon-Jeong Lim

Hyesung Choi

Hiromasa Shibuya

Chul Joon Heo

Yeong Suk Choi

Takkyun Ro

Ryuichi Satoh

Sakurai Rie

Tatsuya Imase

Moon Gyu Han

Satoh Ryuichi

Hiroshi Miyao

Chul-Joon Heo

Sungdong Suh

Kitae Park

Jinkyu Kang

Hyun Chul Lee

Kyung-bae Park

Yoshihiro Yokote

Atsushi Sato

Yutaka Matsuo

Hyoungwoo Choi

Yukika Yamada

Youn Hee Lim

Kenichi Nagayama

Joonseon Jeong

Bulliard Xavier

Nobuji Sakai

Daisuke Nagao

Mikio Konno

Masaaki Okubo

Hideki Imamura

Chuljoon Heo

Shigeto Kobori

Tomoyuki Kuroki

Haruhiko Yamasaki

Keisuke Abe

Hye Sung Choi

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

Organic photoelectronic device and image sensor

An air purification device includes a reactor having a hollow shape and extending in one direction, a discharge plasma generator comprising a first electrode disposed on an outer wall of the reactor and a second electrode disposed inside the reactor, where the discharge plasma generator is configured to generate a discharge plasma in a discharge region, a plurality of dielectric particles disposed on a packed-bed of the reactor, a liquid supplier which supplies a liquid into the reactor, and a liquid recoverer which recovers the liquid discharged from the reactor.

Device and method for purifying air purification device and method

An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p/n) is greater than the second composition ratio (p/n).

Organic photoelectronic device and image sensor and electronic device

Example embodiments provide a compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.

Compound and organic photoelectric device, image sensor and electronic device including the same

An organic photoelectronic device includes a first electrode and a second electrode facing each other, photoelectronic conversion layer between the first electrode and the second electrode and including a first material and a second material providing a p-n junction and an interlayer being adjacent to the first electrode between the first electrode and the photoelectronic conversion layer and including a third material, wherein the first material and the third material are an organic material having each energy bandgap of about 1.7 eV to about 2.3 eV, and an image sensor including the same is provided.

Organic photoelectronic device

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:  In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor and an electronic device include the same.

Compound for organic photoelectric device and organic photoelectric device image sensor, and electronic device including the same

An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes an n-type semiconductor compound that is transparent in a visible ray region and represented by Chemical Formula 1, and a p-type semiconductor compound having a maximum absorption wavelength in a wavelength region of about 500 nm to about 600 nm of a visible ray region.

Organic photoelectric device and image sensor

A fullerene derivative may be included in photoelectric devices and image sensor. Optical absorption characteristics of a thin film including the fullerene derivative may be shifted toward a short wavelength compared with those of the thin film including the unsubstituted C60 fullerene, for example, a thin film including the fullerene derivative may be associated with a peak absorption wavelength (&#x3bb;) that is be shorter than that of a thin film including the unsubstituted C60 fullerene.

Fullerene derivatives and photoelectric devices and image sensors

An organic photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor compound and an n-type semiconductor compound, and the organic photoelectric device satisfies Equation 1, and has external quantum efficiency (EQE) of greater than or equal to about 40% at &#x2212;3 V.

Organic photoelectric device, and image sensor and electronic device including the same

A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer including the compound represented by Chemical Formula 1 between the first electrode and the second electrode.

Compound for organic photoelectric device and organic photoelectric device and image sensor including the same

Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including an n-type semiconductor compound represented by Chemical Formula 1 and a p-type semiconductor compound having selective light absorption in a green wavelength region of about 500 nm to about 600 nm.

Organic photoelectric device image sensor and electronic device

Growing community of inventors

Hwaseong-si, South Korea

Tadao Yagi