Sanyo Electric Co., Ltd.

Tadao Toda

Masayuki Hata

Yasuhiko Nomura

Tsutomu Yamaguchi

Daijiro Inoue

Shigeyuki Okamoto

Yasuyuki Bessho

Takao Yamaguchi

Mitsuaki Matsumoto

Kazushi Mori

Hideyuki Nonaka

A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

Method of fabricating a semiconductor device with a back electrode

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Nitride-based semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device

An SHG device wherein a channel is formed on a part of a waveguide layer; and the thickness of the waveguide layer is set so that the refractive index of the channel for a fundamental is greater than that for an SH (second harmonic) and the refractive index of portions on the both sides of the channel for the SH is greater than that for the fundamental, thereby accomplishing the phase matching between the fundamental and the SH, which satisfies the conditions that an output power of 2 mW or more which is sufficient for reading signals from an optical disk, that the optical intensity distribution at a light emitting end has a single peak, that the optical spot diameter at a light emitting end is small enough, and that the wavelength of the output is in the blue region.

SHG (second-harmonic generation) device

Growing community of inventors

Kyoto, Japan

Tadao Toda