Idemitsu Kosan Company, Limited

Tadao Shibuya

Kazuyoshi Inoue

Hiroshi Tokailin

Yoshikazu Nagasaki

Akira Kaijo

An organic EL element comprising; an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d]/[In3d], is from 0.9 to 1.2 wherein [In3d]is the half band width of a spectral peak derived from a 3dorbit of an In atom in the surface of the anode, and [In3d]is the half band width of a spectral peak derived from a 3dorbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Organic electroluminescence element and production method thereof

An electrode substrate comprising; an electrode comprising a compound containing an In atom and a substrate body, wherein a half band width ratio [In3d]/[In3d]is from 0.9 to 1.2 wherein [In3d]is a half band width of a 3dorbit spectral peak of an In atom in the surface of the electrode, and [In3d]is a half band width of a 3dorbit spectral peak of an In atom in the interior of the electrode, the spectral peaks being measured by X-ray photoelectron spectroscopy: and the method for the production thereof.

Electrode substrate and production method thereof

An organic EL element comprising: an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, &lsqb;In3d &rsqb; /&lsqb;In3d &rsqb; , is from 0.9 to 1.2 wherein &lsqb;In3d &rsqb; is the half band width of a spectral peak derived from a 3d orbit of an In atom in the surface of the anode, and &lsqb;In3d &rsqb; is the half band width of a spectral peak derived from a 3d orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

In a sputtering target comprising at least indium oxide and zinc oxide, the atomic ratio represented by In/(In&plus;Zn) is set to a value within the range of 0.75 to 0.97, a hexagonal layered compound represented by In O (ZnO) wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 &mgr;m or less.

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Sodegaura, Japan

Tadao Shibuya