Mitsubishi Shindoh Co., Ltd.

Tamagawa Kikai Kinzoku Kabushiki Kaisha

Tadao Sakakibara

Rensei Futatsuka

Takeshi Suzuki

Takao Fukatami

Manpei Kuwahara

Shunichi Chiba

Masahiko Ishida

Shuzo Umezu

Seiji Noguchi

Akihito Mori

Synu-ichi Chiba

A plated material reduces insertion and withdrawal forces when used in a connector. A terminal member for a connector and a connector therewith are also provided. The plated material comprises a substratemade of Cu or a Cu alloy and a metal plating layerformed on the surface of the substrate. A soft regionA spreading in a network-shape and a hard regionB surrounded by the network of the soft regionA coexists in the metal plating layer. The soft regionA has a Vickers hardness of 20 to 250, while the hard regionB has a Vickers hardness of 60 to 700, which is at least 30 higher than that of the soft regionA. An average size of the network of the soft regionA is from 5 to 500 &#x3bc;m.

Plated material and method of manufacturing the same, terminal member for connector, and connector

A copper based alloy for use as a material for electrical and electronic parts has a chemical composition by weight, of 0.5 to 3% Ni, 0.1 to 0.9% Sn, 0.08 to 0.8% Si, 0.1 to 3 Zn, 0.007 to 0.25% Fe, 0.001 to 0.2% P, 0.001 to 0.2% Mg, 0.0001 to 0.001% C, and if required, further containing 0.001 to 0.3% at least one element of Cr and Zr, and the balance being Cu and inevitable impurities. The obtained copper alloy is excellent in electric conductivity, solder-exfoliation resistance when bent, high-temperature creep strength, and migration resistance, while being superior in hot workability and blankability to the conventional copper based alloy.

Copper based alloy for electrical and electronic parts excellent in hot

A copper-based alloy connector excellent in electrical conductivity, adherence of solder of the connector when bent, high-temperature creep strength, and migration resistance, consists essentially by weight percent of 0.5 to 3% Ni, 0.1 to 0.9% Sn, 0.08 to 0.8% Si, 0.1 to 3% Zn, 0.007 to 0.25% Fe, 0.001 to 0.2% P, and the balance of Cu and inevitable impurities. The copper-based alloy connector can withstand use for a long term in a high-temperature and high-humidity environment.

Copper-based alloy connector for electrical devices

A copper alloy material for lead frames for semiconductor devices. The lead frame material consists essentially of:

Copper alloy lead frame material for semiconductor devices

A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is within a range from 0.5 to 0.85, preferably within a range from 0.60 to 0.85, so as to form a compound of magnesium and phosphorus or Mg.sub.3 P.sub.2. The copper base lead material possesses satisfactory properties required of a metal material for leads in semiconductor devices, such as strength, thermal resistance, and stampability, and further possesses excellent heat radiation to an extent suitable for use as leads of semiconductor devices having high wiring densities. The invention also includes the semiconductor device containing said leads.

Copper base lead material for leads of semiconductor devices

A copper base alloy for leads of an integrated circuit consisting essentially of from 0.5 to 1.5% by weight of iron, from 0.5 to 1.5% by weight of tin, from 0.01 to 0.35% by weight of phosphorus, and the balance of copper and inevitable impurities. Said alloy possesses satisfactory properties which are required of leads of integrated circuits.

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Aizuwakamatsu, Japan

Tadao Sakakibara