Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Tadao Okimoto

Hiroshi Tamagaki

Hirofumi Fujii

Toshiki Segawa

Hideki Yutaka

Ryoji Miyamoto

In a sputter device (), power of a DC power source () is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (). A power source () provided to each of the sputter evaporation sources () supplies continuous power to each of the sputter evaporation sources (). The sputter device () having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (), which reduces the device cost.

Sputter device

A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller.

Plasma CVD apparatus

The disclosed plasma CVD apparatus () is provided with a vacuum chamber (); a pair of deposition rollers () disposed within the vacuum chamber () that are connected to both poles of an AC power supply and around which a substrate (W) is wound; a gas-supplying device () that supplies process gas containing a source gas to a deposition zone (D) which is a portion of or all of the region that is on one side of a line linking the centers of rotation of the pair of deposition rollers (); and a magnetic-field-generating device () that, by means of the AC power supply being applied to each of the deposition rollers (), forms a magnetic field that causes the source gas in a predetermined region to become plasma. The magnetic-field-generating device () causes the source gas in the region adjacent to the surface of the portion of the pair of deposition rollers () located within the deposition zone (D) to become plasma, forming a plasma region (P). The substrate (W) is wound around the pair of deposition rollers () so as to pass through the plasma region (P).

An arc ion plating apparatus comprises a vacuum chamber, a rotary table for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source for bombardment for cleaning the surface of the substrate with metal ions, and an arc evaporation source for deposition group for depositing metal ions on the surface of the substrate. The arc evaporation source for deposition group is composed of a plurality of evaporation sources arranged so as to be opposite to the substrate set on the rotary table, and the arc evaporation source for bombardment is arranged so as to be opposite to the substrate, and formed so that its length in the height direction of the vacuum chamber is equal to the length between the upper and lower ends of the arc evaporation source for deposition group. According to such a structure, over temperature rise or abnormal discharge is hardly caused in the substrate at the time of bombardment, and process controllability is consequently enhanced.

Arc ion plating apparatus

A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a vapor growth synthesizing method. A cooler is disposed between the annular waveguide and the reaction chamber to maintain the low temperature of the annular waveguide.

Growing community of inventors

Takasago, Japan

Tadao Okimoto