Tokyo Shibaura Denki Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Other

Tokyo Shibaura Electric Co., Ltd.

Tadao Miura

Mitsuo Yamashita

Takashi Takaoka

Masahiko Mochizuki

Akio Hori

Sumio Ikegawa

Masayuki Sagoi

Shun-ichiro Tanaka

Yoshiaki Terashima

Hiroshi Washida

Hiroshi Morita

Touru Sumiya

On a semiconductor layer consisting of a substrate of a semiconductor single crystal or the like, a metallic layer of a thickness of 20 nm or less is formed. The metallic layer comprises a first area A directly contacting with the semiconductor layer and a second area B that is interposed by an intermediate layer consisting of an insulator, a metal different from the metallic layer or a semiconductor different from the semiconductor layer between the semiconductor and the metallic layer and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.

Film-like composite structure and method of manufacture thereof

A superconducting element is disclosed which comprises a lower superconducting layer, an upper superconducting layer, and an intermediate layer interposed between the lower and upper superconducting layers. The lower and upper superconducting layers are both form of a superconducting cuprate. The intermediate layer is formed of a layered cuprate containing in the crystal structure thereof multiple fluorite blocks represented by the formula:

Superconducting element having an intermediate layer with multiple

A method is disclosed which comprises setting a substrate within a mixed gas atmosphere containing 0.1 to 5% of oxygen gas and a balance as an inert gas, and sputtering a target member containing Ln, M, Cu and O within that atmosphere to obtain an oxygen-deficient perovskite type oxide superconducting thin-film of substantially Ln:M:Cu:O=1:2:3:(7-.delta.), where Ln represents at least one element selected from the rare earth elements and M represents at least one element selected from the group consisting of Ba, Sr, and Ca. The oxide superconducting thin-film of that composition ratio has a critical temperature of over 77K.

Method for manufacturing an oxide superconducting thin-film

In an optical disk having an optical recording layer which is capable of having information thereon using a laser beam with information superposed by modulation there is formed a spiral protruding or recessed track having a width equal to about half or less of the wavelength of a laser beam to be used, this track being utilized as the guiding track of the laser beam. A method for manufacturing such an optical disk is also disclosed according to which a recessed track for tracking is formed by plastic deformation of the upper surface of an original disk with a hard processing stylus such as a diamond stylus. The original disk thus produced is utilized for forming an optical recording disk having a protruding or recessed guiding track.

Optical disk with narrow guide tracks

Method for manufacturing an optical disc

A method of making an optical memory disk and a product thereby comprising the steps of applying a thin tellurium film to a base plate, and of forming an oxidizing layer on the surface of the tellurium by oxidizing treatment of the tellurium film, and an optical memory disk produced by the above-mentioned method.

Method of making an optical memory disk and a product thereby

An electrochromic display device comprising a first electrode composed of a substrate and a patterned conductive film formed thereon, an electrochromic material layer formed to cover the entire surface of the conductive film, a counter electrode disposed a predetermined distance apart from the first electrode, and an electrolyte disposed between these two electrodes.

Growing community of inventors

Yokohama, Japan

Tadao Miura