Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Tadao Hashimoto

Masaaki Yuri

Masahiro Ishida

Osamu Imafuji

Kunio Itoh

Kenji Orita

A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In Ga N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

Semiconductor substrate, semiconductor device and method of manufacturing the same

A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Al Ga N (where 0&lE;&times;&lE;1) on a nitride compound semiconductor substrate at a temperature of about 900&deg; C. or more.

Method for growing nitride compound semiconductor

The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al,Ga,In,B,N (where 0&lE;x, y, z&lE;1 and 0&lE;x&plus;y&plus;z&lE;1), which is transparent to light emitted from the laser diode.

Nitride semiconductor laser device

A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

Growing community of inventors

Hyogo, Japan

Tadao Hashimoto