Fuji Electric Co., Ltd.

Fujifilm Corporation

Fuji Electric Systems Co. Ltd.

Tadanori Yamada

Toshio Denta

Tomonori Seki

Eiji Mochizuki

Tadahiko Sato

Ryu Araki

Michio Tamate

Hiroki Katsumata

Miwako Fujita

Tamiko Asano

Takashi Kaimi

Yuhei Suzuki

Yuta Sunasaka

Bao Cong Hiu

Takeyoshi Nishimura

Takashi Kobayashi

Yasushi Niimura

Hidehiro Mochizuki

Ryuta Takegami

Kuniyuki Kaminaga

Akihito Fukunaga

Masanori Tanaka

Yutaka Maeno

Toshiki Takei

Kazuhide Kanemura

Kazutaka Chibana

There are provided a pearl culture material containing at least one selected from the group consisting of a pearl nucleus and a mantle, and the at least one selected from the group consisting of a pearl nucleus and a mantle contains a protein having 10 EU/g or less of an endotoxin amount, a nucleus insertion method, and a pearl culture material composition.

Pearl culture material, nucleus insertion method, and pearl culture material composition

An object of the present invention is to provide a separation substrate having a high megakaryocyte blocking rate and a high platelet permeation rate, and a cell separation filter and a method for producing a platelet which use the same. The separation substrate of the present invention is a separation substrate including non-woven fabric for separating a platelet from a cell suspension containing a megakaryocyte and the platelet, in which an average pore diameter of the separation substrate is 2.0 &#x3bc;m to 15.0 &#x3bc;m, and a thickness of the separation substrate is 10 &#x3bc;m to 500 &#x3bc;m.

Separation substrate, cell separation filter, and method for producing platelet

The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.

Evaluation method, combined evaluation method, evaluation apparatus, and combined evaluation apparatus

The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.

Evaluation method, estimation method, evaluation apparatus, and combined evaluation apparatus

A semiconductor device includes a resin case which houses a semiconductor element, a plurality of lead frames disposed in the principal plane of a base of the resin case with spaces therebetween, and a block portion disposed over a space between adjacent lead frames along the adjacent lead frames. With the semiconductor device, the disposition of the block portion makes creepage distance long, compared with a case where the block portion is not disposed and therefore a space between the adjacent lead frames is flat. Accordingly, even if metal atoms contained in the lead frames or the like migrate on an insulator or at an interface because of migration, a conduction path is hardly formed between the adjacent lead frames. That is to say, a short circuit hardly occurs between the adjacent lead frames with the block portion therebetween. This semiconductor device provides improved reliability.

Semiconductor device

An inverter drive device for driving a semiconductor switching element that controls an output current of an inverter. An inverter drive device includes a drive circuit configured to apply a drive voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on and off, the turning off of the semiconductor switching element causing a counter electromotive force to be generated therein, a clamping diode configured to clamp a voltage of the generated counter electromotive force, a voltage dividing resistor configured to detect a voltage that is proportional to a current flowing through the clamping diode, and an auxiliary drive circuit configured to generate a control voltage in accordance with the voltage detected by the voltage dividing resistor, and to apply the control voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on.

Inverter drive device and semiconductor module

A miniaturized semiconductor device includes a frame body having an opening region formed in a central portion, an insulating substrate which is provided in the opening region of the frame body and on which semiconductor chips are mounted, lead portions, each including an inclined portion that is at least partially exposed to the opening region formed in the frame body and extends so as to be inclined with respect to an end surface forming the opening region, and a bonding wire that is bonded between the lead portion and the semiconductor chip by ultrasonic bonding.

Lead portion of semiconductor device

In a semiconductor device, an insulating substrate housed in an housing opening portion of a resin case includes an insulating board, a first metal layer formed on the upper surface of the insulating board, a second metal layer which is formed on an outer peripheral edge portion of the upper surface of the insulating board and is in contact with a level difference portion, and a third metal layer formed on the under surface of the insulating board and leveled with or protruding from the under surface of the resin case. The first and second metal layers are formed by etching copper foil formed on the insulating board so that these metal layers have the same thickness. The thickness of the second metal layer may be changed relatively freely according to the housing depth of the resin case. Thus, the semiconductor device may be made thin.

Semiconductor device having a substrate housed in the housing opening portion

In a semiconductor device, semiconductor chips and lead frames are soldered at the same time on an insulating circuit board by one reflow soldering, and the positions of the externally led out lead frames undergo no change. In manufacturing the semiconductor device, after power semiconductor chips and control ICs are mounted on an insulating circuit board, and lead frames are disposed thereon, the semiconductor chips and lead frames are soldered at the same time on the insulating circuit board by one reflow soldering. Furthermore, after a primary bending work is carried out on the lead frames, and a terminal case is mounted over the insulating circuit board, a secondary bending work is carried out on the lead frames.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a plurality of semiconductor elements; first semiconductor chips including first semiconductor elements, the first semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements and having a current flowing greater than that of the other semiconductor elements; second semiconductor chips having second semiconductor elements, the second semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements for controlling the first semiconductor elements; an insulating substrate having a first wiring pattern bonded with the first semiconductor chips; and an insulating member having a second wiring pattern mounted with the second semiconductor chips.

A semiconductor device includes an insulating circuit substrate mounted with at least one semiconductor element; a resin case having a bottom surface portion attached with the insulating circuit substrate and a side surface portion enclosing a periphery of the bottom surface portion; a lead molded integrally with the resin case and provided on a periphery of the insulating circuit substrate to be positioned on a surface of the bottom surface portion inside the resin case, the lead partially extending from inside the resin case to outside the resin case; and a sealing resin filled inside the resin case. A depressed portion is formed on two sides of the lead along a peripheral edge of the bottom surface portion inside the resin case.

A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device.

Growing community of inventors

Matsumoto, Japan

Tadanori Yamada