National Institute for Materials Science

Tdk Corporation

Samsung Electronics Co., Ltd.

Kabushiki Kaisha Toshiba

National Institute of Advanced Industrial Science and Technology

Tohoku University

Denka Company Limited

Tadakatsu Ohkubo

Kazuhiro Hono

Seiji Mitani

Hiroaki Sukegawa

Katsuyuki Nakada

Shinto Ichikawa

Jie Tang

Takao Furubayashi

Koichiro Inomata

Shinya Kasai

Masafumi Shirai

Shuai Tang

Jason Paul Hadorn

Jungwoo Koo

Kouichiro Inomata

Jun Uzuhashi

Zhenchao Wen

Junichi Ito

Tadaomi Daibou

Naoharu Shimomura

Shinji Yuasa

Yuuzo Kamiguchi

Yushi Kato

Kwangseok Kim

Luchang Qin

Yukiko Takahashi

Takayuki Nozaki

Hiromitsu Chatani

Jun Liu

Daisuke Ishikawa

Thomas Scheike

Ikhtiar

Xiandong Xu

Hwachol Lee

Ta-Wei Chiu

Yoshio Miura

Po-Han Cheng

Shingo Muramoto

Kazutaka Abe

Tomohiko Niizeki

Rachwal Anna Koziol

Masahito Tsujikawa

Mohamed Belmoubarik

Pohan Cheng

A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.

Electron source, manufacturing method therefor, and device comprising electron source

The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant &#x3b1; of the first layer and a lattice constant &#x3b2; of the second layer satisfy a relationship of &#x3b2;&#x2212;0.04&#xd7;&#x3b1;&#x2264;2&#xd7;&#x3b1;&#x2264;&#x3b2;+0.04&#xd7;&#x3b1;.

Magnetoresistive effect element containing two non-magnetic layers with different crystal structures

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Magnetic element, magnetic memory device, and magnetic sensor

The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAlOtype insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a CoFeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an MgAl(0&#x3c;x&#x2264;1) alloy, and exhibits tunnel magnetoresistance of 250% or more and 34000% or less at a room temperature.

Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction

An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layeron a substrate, wherein the first ferromagnetic layerincludes a Heusler alloy, the second ferromagnetic layerincludes a Heusler alloy, the non-magnetic layerincludes a I-III-VIchalcopyrite-type compound semiconductor, and the non-magnetic layerhas a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [&#x3a9;&#x3bc;m] or more and 3 [&#x3a9;&#x3bc;m] or less.

Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used

Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42&#xb0; to 54&#xb0; with respect to the &#x3c;001&#x3e; direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same

Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgAl(0&#x2264;x&#x3c;1) and an amount of oxygen in the tunnel barrier layer is lower than an amount of oxygen in a fully oxidized state in which the oxide has an ordered spinel structure.

Magnetoresistance effect element and method for manufacturing the same

According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Magnetoresistive element and magnetic memory device

Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate () of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer () formed on the substrate () from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42&#xb0; to 54&#xb0; with respect to the &#x3c;001&#x3e; direction or the (001) orientation of the substrate (); and a perpendicularly magnetized layer () located on the metal underlayer () and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.

Provided is a structure having a perpendicular magnetization film which is an (MnGa)N(0&#x3c;x&#x2266;0.5, 0&#x3c;y&#x3c;1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.

Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium

A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same

Growing community of inventors

Ibaraki, Japan

Tadakatsu Ohkubo