Tosoh Corporation

Sagami Chemical Research Center

Sagami Chemical Research Institute

Tadahiro Yotsuya

Noriaki Oshima

Ken-ichi Tada

Hirokazu Chiba

Toshiki Yamamoto

Tsuyoshi Tanaka

Naoki Uchida

Taishi Furukawa

Tetsu Yamakawa

Koichiro Inaba

Kohei Iwanaga

Nobumichi Arai

Atsushi Maniwa

Keisuke Nomura

Yuji Oka

Kana Fujita

Yuuichi Miyashita

Ken-Ichi Tada

A novel heterocyclic compound for an organic electroluminescent device excellent in long service life and light-emitting characteristics is provided. A cyclic azine compound has at least one substituent (substituent B) selected from a specific group.

Heterocyclic compound for organic electroluminescent device and its application

A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein Rand Reach independently represent an alkyl group having 1-16 carbon atoms; Rand Reach independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and Rrepresents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Titanium complex, processes for producing the same, titanium-containing thin film, and process for producing the same

Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M(NR)X(L)(2) and an alkali metal alkoxide (3): (wherein Mrepresents niobium atom or tantalum atom, Rrepresents an alkyl group having from 1 to 12 carbon atoms, Rrepresents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and Mrepresents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

Imide complex, method for producing the same, metal-containing thin film and method for producing the same

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Kanagawa, Japan

Tadahiro Yotsuya